A Quantum Hydrodynamic Simulation of Strained Nanoscale VLSI Device

Abstract

Abstract. Strained silicon field effect transistor (FET) has been known for enhancing carrier mobility. The stained Si channel thickness, the Si 1-x Ge x composition fraction and the Si 1-x Ge x layer thickness are three crucial parameters for designing strained Si/SiGe MOSFET. Mobility enhancement and device reliability may be unnecessarily conservative. In this paper, numerical investigation of drain current, gate leakage and threshold voltage for strained Si/SiGe MOSFET are simulated under different device profiles. According to our results, the optimal combination of parameters are as follows: stained Si channel thickness is 7 nm, Ge content is 20%, and the Si 1-x Ge x layer thickness should be chosen between 20~50 nm.