A quantum device driven by an on-chip CMOS ring oscillator

Abstract

We present the co-integration of a ringoscillator based CMOS circuit purposely designed to drive RF signals onto the gates of a single-electron device. It is fabricated on 300 mm wafers with the nanowire silicon-oninsulator technology and operated at cryogenic temperatures. Using the same technology for both the classical circuit and the quantum device is a unique opportunity which is implemented by simply changing the width of the fieldeffect transistors. While 25 nm widths yield devices behaving as quantum devices, 1 μm relaxed widths guarantee a safe operation of the CMOS circuit since its components behave as regular Field-Effect transistors. We demonstrate the operation of the circuit at low temperature and observed the generation of DC currents in the absence of any applied DC bias. The generated DC current can be well explained in the framework of a rectification model [8]. The successful operation of such a co-integrated circuit can be very promising for future integration of quantum nanoelectronic devices.

Nanomaterials‐based gas sensors of SF 6 decomposed species for evaluating the operation status of high‐voltage insulation devices

“…Coulomb blockade state [63, 64]. By applying bias voltage, the flow of electrons through the source‐QD‐drain path fulfils the conduction on the island, which means the island potential can be tuned by a capacitively coupled gate [65]. Since SET has high sensitivity towards the electrostatic environment and controllability over the participating number of electrons in the conduction process, it is a promising candidate for gas sensors.…”