A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers

Fehse, R.; Tomić, Stanko; Adams, A.R.; Sweeney, S. J.; O’Reilly, Eoin P.; Andreev, A. D.; Riechert, H.

doi:10.1109/jstqe.2002.801684

Cited by 148 publications

(121 citation statements)

References 33 publications

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“…The characteristic temperature T 0 ͓=͑d ln J th / dT͒ −1 ͔ was found to be T 0 ϳ 200 K below 110 K dropping to T 0 ϳ 60 K above 110 K. Both J th and its radiative component J rad are unusually temperature stable below 110 K, even higher than T 0 = T, as would ideally be for a radiatively dominated quantum well. 8 This may be an indication of inhomogeneities within the active region, as similar behavior ͑decreasing J th and J rad with increasing T͒ has been observed in other dilute nitride 10 and quantum dot lasers 11 where carrier localization due to material inhomogeneity can be significant. The lack of complete pinning of the spontaneous emission above threshold is also a signature of inhomogeneities.…”

Section: Materials Sciences Center and Department Of Physicssupporting

confidence: 63%

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings

Adams

Sweeney

et al. 2008

Applied Physics Letters

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We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/ cm 2 at 80 K ͑ = 890 nm͒. Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2975845͔The dominance of silicon ͑Si͒ for electronic and microelectronic circuit applications has lead to the search for monolithic optoelectronic integrated circuits ͑OEICs͒ on Si substrates. One of the key components of OEICs is a laser material for efficient light emission. However, the indirect band gap of Si has meant efficient light emission and gain have been difficult to achieve. Several strategies for producing lasers on silicon have been proposed, such as the "hybrid" laser, 1 whereby an InP-based active region is wafer fused onto a silicon/silica based waveguide or utilizing the Raman effect with external optical pumping. 2 However monolithic growth on a silicon substrate coupled with electrical injection has remained challenging. Growth of conventional direct III-V compound semiconductors directly onto Si is very difficult due to the formation of threading dislocations as a result of the large lattice mismatch. However, it has been shown that GaP can be grown without dislocations on Si due to the relatively small difference in lattice constant ͓Ͻ0.4% at room temperature ͑RT͔͒. 3 GaP is itself an indirect band gap semiconductor, but a GaNAsP alloy with high As fractions and dilute N fractions ͑of ϳ4%͒ can form a direct band gap material approximately lattice matched to GaP and Si. 4 Hence the realization of a GaP-based direct band gap semiconductor laser material on a silicon substrate can provide a realistic route toward monolithic laser sources for silicon-based OEICs. This is also another example of the potential for dilute nitride based materials in optoelectronic components.In this letter, we investigate the properties of GaNAsP lasers grown on GaP substrates. Using high pressure and low temperature techniques we have probed the extent to which a two level band anticrossing ͑BAC͒ ͑Ref. 5͒ model may be used to describe this material and have investigated the degree to which different carrier recombination processes govern laser behavior.The samples studied were grown by metal organic vapor phase epitaxy ͑MOVPE͒ on a GaP substrate. They consist of a single 6 nm GaN 0.04 As 0.8 P 0.16 2.5% compressively strained quantum well ͑SQW͒ within two undoped 150 nm GaP barrier/separate confinement layers. Optical confinement is provided by...

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Section: Materials Sciences Center and Department Of Physicssupporting

confidence: 63%

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings

Adams

Sweeney

et al. 2008

Applied Physics Letters

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“…This unusually large T 0 is an indication of inhomogeneities in the active region and a non-thermal carrier distribution, as described in Ref. 19. This suggests that improvements in the material quality cause significant performance improvement in the current devices compared to the similar devices reported in Refs.…”

supporting

confidence: 64%

Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers

Hossain

Jin

Liebich

et al. 2012

Applied Physics Letters

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We report on the carrier recombination mechanisms in dilute nitride Ga(NAsP)/GaP quantum well lasers. Spontaneous emission measurements show that defect-related recombination in the devices is less significant compared with other GaAs-based dilute nitride lasers. From temperature dependent measurements, we find that the threshold current density, Jth is dominated by non-radiative recombination process(es), which account for at least 91% of Jth at room temperature. The characteristic temperature, T0 (T1) is measured to be ∼104 K (∼99 K) around 200 K, which drops to ∼58 K ( ∼37 K) around room temperature. Hydrostatic pressure measurements reveal a strong increase of threshold current with increasing pressure. This implies that current leakage dominates carrier recombination which is also responsible for their low T0 and T1 values at room temperature.

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“…This conclusion is consistent with measurements of the monomolecular recombination coefficient on the related GaInNAs/ GaAs material system. 13 Using a differential carrier lifetime technique based on impedence matching, 14 an order of magnitude increase over conventional GaAs and InP based materials was recorded.…”

Section: Results: Gain Dynamicsmentioning

confidence: 99%

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Piwoński¹,

Pulka²,

Madden³

et al. 2009

Journal of Applied Physics

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The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers are studied using heterodyne pump probe spectroscopy, both in forward and reverse bias regimes. In the forward biased absorption regime, both gain and refractive index relax on the same timescale indicating that both quantities are linked to the same relaxation process, interband recombination. Above transparency, in the forward biased gain regime, the gain and phase exhibit differing timescales resulting in a dynamical alpha factor that varies strongly with time. Reversed bias measurements suggest a recombination dominated absorption recovery where the recovery timescale increases with increasing reversed bias, possibly due to charge separation effects.

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A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers

Cited by 148 publications

References 33 publications

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

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