A pulse‐width adjustable electro‐optic Q‐switched nanosecond laser oscillator

Abstract

An all-solid-state pulse width adjustable Nd:YAG nanosecond laser at 1064 nm is demonstrated based on the bidirectional voltage supplied Q-switched technology. Continuously adjustable pulse-width from 4.6 to 32.3 ns is generated in a linear cavity, which is laser diode side-pumped at 808 nm at 100 Hz repetition rate. With 27 ns Q-switch duration, the shortest pulse width of 4.6 ns with single pulse energy of 0.77 mJ and a near-Gaussian beam quality (M 2 < 1.6) is obtained. Our results suggest an approach to generating pulsewidth adjustable nanosecond lasers for applications in LIDAR.

Investigation on the saturable absorption characteristics of GeNS and its application to harmonic mode‐locked modulation

“…Ultrafast pulse lasers with high pulse repetition rates possess widespread applications, including laser gyroscopes, laser radar systems, multiphoton microscopy, nonlinear bioimaging, and so on, due to their exceptional compactness, rather low cost and excellent pulse output properties. [1][2][3][4][5][6][7][8][9][10][11] Since the end of the last century, theories and experiments on the harmonic mode-locked (HML) fiber lasers have been widely reported. [12][13][14][15][16] The HML pulses can be acquired via the passively mode-locked technique based on nonlinear amplifying loop-mirror, 17 nonlinear polarization rotation, 12,18,19 or real saturable absorbers (SAs).…”

A 1.62‐W passively Q‐switch Tm3+‐doped laser with a Bi2O2Se saturable absorber

“…6,7 Among the many two-dimensional (2D) materials with broadband saturable absorption, such as semiconductor saturable absorber mirrors, black phosphorus and transition metal dichalcogenides have been widely implemented to obtain ultrashort pulse. [8][9][10][11][12][13][14][15][16][17][18] As a kind of thermoelectric material, layered bismuth oxychalcogenides (Bi 2 O 2 X, including Bi 2 O 2 S, Bi 2 O 2 Se, and Bi 2 O 2 Te) have attracted renewed interest as a promising next-generation electronic semiconductor. 19,20 Among the three of them, the stable chemical potential of Bi 2 O 2 Se is comparatively wider, it has been demonstrated to be the easiest to synthesize.…”

“…By comparison with actively Q‐switched technology, PQS lasers combined with a saturable absorber (SA) have been proved to be a simple, compact, and low‐cost way in which to be extensively employed to obtain nanosecond‐ or microsecond‐level lasers 6,7 . Among the many two‐dimensional (2D) materials with broadband saturable absorption, such as semiconductor saturable absorber mirrors, black phosphorus and transition metal dichalcogenides have been widely implemented to obtain ultrashort pulse 8–18 …”

A diode‐pumped SnS2 passively Q‐switched Tm‐doped pulsed laser

“…Falling into the eye-safe range, near-infared lasers have been extensively applied in such fields as laser processing, environmental monitoring, optical communication, medical diagnosis, [1][2][3][4] and laser spectroscopy, [5][6][7][8][9][10][11] especially 2 μm pulsed lasers. 12,13 Due to its low cost and structural simplicity, the PQS technology was accepted as a mainstream method of pulsed laser generation, with a two-dimensional material as a SA.…”