1985
DOI: 10.1007/bf00547878
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A pseudopotential study of the hydrogen bond in H2O·H2S, H2S·H2S and H2O·H2Se systems

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Cited by 11 publications
(1 citation statement)
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“…The highest binding energy is found at the T Se site with a binding energy of 2.43 eV, which is relatively higher than single atom interaction with single-layer graphene (0.98 eV) [45]. At the energetically most favorable site, T Se , the Se-H bond length is calculated to be 1.48 Å, in agreement with the expected bond length of H-Se (1.47) Å) [46]. In order to compare with single H adsorption on graphene layer, we also investigate the binding energy of H atom on graphene.…”
Section: Pristine Sb 2 O 2 Se 2 Single-layersupporting
confidence: 67%
“…The highest binding energy is found at the T Se site with a binding energy of 2.43 eV, which is relatively higher than single atom interaction with single-layer graphene (0.98 eV) [45]. At the energetically most favorable site, T Se , the Se-H bond length is calculated to be 1.48 Å, in agreement with the expected bond length of H-Se (1.47) Å) [46]. In order to compare with single H adsorption on graphene layer, we also investigate the binding energy of H atom on graphene.…”
Section: Pristine Sb 2 O 2 Se 2 Single-layersupporting
confidence: 67%