A Proposed Confinement Modulated Gap Nanowire Transistor Based on a Metal (Tin)

Ansari, Lida; Fagas, Giorgos; Colinge, Jean-Pierre; Greer, James C.

doi:10.1021/nl2040817

Cited by 46 publications

(54 citation statements)

References 30 publications

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“…More recently, with the advances in nanofabrication, NWs with diameters as low as 1 nm have been experimentally realized [7] and their measured band gaps reproduced by GW-corrected density functional theory (DFT) calculations [8,9]. Analogous to band-gap widening observed in semiconductors, bulk semimetals' electronic properties have been reported to transition to those of a semiconductor with the emergence of a band gap for structures with critical dimensions on the order of 10 nm as a result of quantum confinement with predicted band-gap values well above 1 eV in α − Sn NWs with diameters of approximately 1 nm [10].…”

Section: Introductionmentioning

confidence: 83%

“…We study the evolution with NW size and crystallographic orientation by considering structures with diameters of approximately 1.5 and 3 nm grown along lowindex crystallographic orientations. NW structures have been reported to exhibit electron transport properties which makes them particularly suitable for applications in electronics [22], and, in particular, α − Sn NWs have been previously proposed for the design of novel nanoelectronic devices [10]. Therefore, we take a particular interest in the effects on energy band gaps-a key quantity for such applications-and improve upon the DFT description by means of a scheme based on the GW [23] approximation which has been shown to greatly improve the description of band gaps in semiconductors [24,25].…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure tuning via surface modification in semimetallic nanowires

2016

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Original citationSanchez-Soares, A., O'Donnell, C. and Greer, J. C. (2016) Electronic structure properties of nanowires (NWs) with diameters of 1.5 and 3 nm based on semimetallic α − Sn are investigated by employing density functional theory and perturbative GW methods. We explore the dependence of electron affinity, band structure, and band-gap values with crystallographic orientation, NW crosssectional size, and surface passivants of varying electronegativity. We consider four chemical terminations in our study: methyl (CH 3 ), hydrogen (H), hydroxyl (OH), and fluorine (F). Results suggest a high degree of elasticity of Sn-Sn bonds within the Sn NWs' cores with no significant structural variations for nanowires with different surface passivants. Direct band gaps at Brillouin-zone centers are found for most studied structures with quasiparticle corrected band-gap magnitudes ranging from 0.25 to 3.54 eV in 1.5-nm-diameter structures, indicating an exceptional range of properties for semimetal NWs below the semimetal-to-semiconductor transition. Band-gap variations induced by changes in surface passivants indicate the possibility of realizing semimetal-semiconductor interfaces in NWs with constant cross-section and crystallographic orientation, allowing the design of novel dopant-free NW-based electronic devices.

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Section: Introductionmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Electronic structure tuning via surface modification in semimetallic nanowires

2016

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“…As pointed out in refs. [2,3,4], the use of a semimetal avoids the need to form a heterojunction or to introduce doping in a homojunction to achieve a current rectifier or diode. This approach thus offers advantages in the fabrication of novel electronic devices on the length scale of a few nanometer.…”

Section: Introductionmentioning

confidence: 99%

Properties of homo- and hetero-Schottky junctions from first principle calculations

Greer

Blom

Ansari

2018

J. Phys.: Condens. Matter

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Electronic structure calculations for a homo-material semimetal (thick Sn)/semiconductor (thin Sn) heterodimensional junction and two conventional metal (Ag or Pt)/silicon hetero-material junctions are performed. Charge distributions and local density of states are examined to compare the physics of junctions formed by quantum confinement in a homo-material, heterodimensional semimetal junction with that of conventional Schottky hetero-material junctions. Relative contributions to the Schottky barrier heights are described in terms of the interface dipoles arising due to charge transfer at the interface and the effects of metal induced gap states extending into the semiconducting regions. Although the importance of these physical mechanisms vary for the three junctions, a single framework describing the junction energetics captures the behaviors of both the heterodimensional semimetal junction and the more conventional metal/semiconductor junctions.

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“…Besides, metallic channels also benefit from no Schottky barrier at the source and drain. In fact, the graphene, carbon nanotube, crystalline tin, and bismuth-based compounds have been proposed as the metallic channels, and the conductance modulation of such metallic channels by the electric field has been observed typically at low temperatures 23–29 . The key point of metallic channels is their high electron concentration, which prevents the penetration of electric field into the channel.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Cheng

Wang

Chang

et al. 2017

Sci Rep

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Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistance was achieved in the metallic channel transistors, in which the oxygen-doped TiN ultrathinbody channels were prepared by the atomic layer delta doping and deposition (AL3D) with precise control of the channel thickness and electron concentration. The decrease of channel thickness leads to the reduction in electron concentration and the blue shift of absorption spectrum, which can be explained by the onset of quantum confinement effect. The increase of oxygen incorporation results in the increase of interband gap energy, also giving rise to the decrease in electron concentration and the blue shift of absorption spectrum. Because of the significant decrease in electron concentration, the screening effect was greatly suppressed in the metallic channel. Therefore, the channel modulation by the gate electric field was achieved at room temperature due to the quantum confinement and suppressed screening effect with the thickness down to 4.8 nm and the oxygen content up to 35% in the oxygen-doped TiN ultrathin-body channel.With the rapid evolution of semiconductor technology down to the sub-10 nm technology node, nanoscale transistors based on new structures and materials have been explored [1][2][3][4][5][6][7][8][9][10][11] . One of the possible candidates for sub-10 nm devices is the junctionless transistors (JLTs), in which an ultrathin semiconductor body with a single doping type in the source, channel, and drain has been proposed 2, 12-15 . A JLT can be regarded as a "gated-resistor" with the absence of PN junctions in the source and drain regions. A gate voltage is applied to control the current by the formation of a depletion region in channel. Because of the absence of PN junctions in JLTs, the ultrafast thermal annealing for the dopant activation in source and drain is not needed, which allows one to fabricate the transistors with smaller channel lengths. Moreover, the presence of PN junctions in metal-oxide-semiconductor field effect transistors (MOSFETs) causes the extension of source/drain depletion charges into the channel, giving rise to severe short-channel effects including the drain-induced barrier lowering and degraded subthreshold slope 2 . Hence the severe short-channel effects can be alleviated in JLTs [15][16][17] . In addition, in the OFF state of JLTs, the effective distance between source and drain is longer than the physical gate length due to the extension of the channel depletion into source and drain, which suppresses the short channel effects in JLTs 17,18 . Accordingly, the junctionless structure provides the solution to overcome the difficulties related to aggressive scaling of MOSFETs. Actually, the JLT with a channel length down to 3 nm has been demonstrated 19 . In order to achieve a high ...

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A Proposed Confinement Modulated Gap Nanowire Transistor Based on a Metal (Tin)

Cited by 46 publications

References 30 publications

Electronic structure tuning via surface modification in semimetallic nanowires

Electronic structure tuning via surface modification in semimetallic nanowires

Properties of homo- and hetero-Schottky junctions from first principle calculations

Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

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