A programmable oeic for laser applications in the range from 405nm to 780nm

Analog Integr Circ Sig Process

Marchlewski

Zimmermann

2008

An optical sensor front-end with integrated PIN photodiode in 0.6 lm BiCMOS technology intended for universal optical storage operation is presented. It is based on a mixed current conveyor and voltage amplifiers topology avoiding stability problems. The transimpedance is continuously variable and directly proportional to a voltagecontrolled resistance. Another voltage-controlled resistor within a variable-gain voltage amplifier increases the photosensitivity range. A fixed-gain voltage amplifier and a current biasing of the current conveyor enable frequency bandwidth enhancement leading to a large transimpedance bandwidth product. A linearity error smaller than 2.8%, a photo-sensitivity range of 541 (54.7 dB) with the largest photo-sensitivity of 2468 mV/lW, an offset voltage \13.7 mV, a frequency bandwidth up to 277 MHz, a slew rate up to 377 V/ls, a transimpedance bandwidth product up to 122 TX Hz, and a maximum power consumption of \4.3 mW are achieved.

Section: Experimental and Simulation Resultssupporting

confidence: 85%

Section: Experimental and Simulation Resultssupporting

confidence: 77%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 122 TΩ Hz transimpedance bandwidth product BiCMOS optical sensor front-end with a 54.7 dB voltage-controlled photo-sensitivity range

Analog Integr Circ Sig Process

Marchlewski

Zimmermann

2008

“…In addition, due to the different operating conditions in optical storage systems (different wavelengths of the laser light used, read and write operation, and multilayer discs), TIAs should have variable gain. The examples of such OEICs are [1] and [2] with switchable gain based on digitallycontrolled pass-transistor arrays and feedback polysilicon resistors, [3] and [4] with a two-stage current amplifier followed by a classical TIA stage, [5] based on a Gilbert cell, and [6] and [7] with non-linear transfer characteristics using single-MOSFET voltage-controlled resistors (VCRs). On the other hand, it is desirable to use photodiodes with large sensitive area to ensure that all the incident light is coupled into it [1].…”

Section: Introductionmentioning

confidence: 99%

Optical Receiver with Voltage-Controlled Transimpedance in BiCMOS Technology

2006 25th International Conference on Microelectronics

Zimmermann²

Self Cite

An optical receiver in 0.6 m BiCMOS technology with voltage-controlled resistor-based variable transimpedance is presented. The frequency bandwidth is independent of the photodiode capacitance. A linearity error smaller than 2.8 %, a sensitivity dynamic range of 76.3 (37.7 dB), an offset voltage smaller than 0.47 mV, a bandwidth up to 204 MHz, and a maximum power consumption of less than 4.05 mW have been achieved.

On frequency response and stability of an optical front–end with variable‐gain current amplifier using a bipolar junction transistor translinear loop

Zogović

Gaberl

et al. 2012

Circuit Theory & Apps

A comparative analysis of implementations of an optical front-end with variable transimpedance intended for optical storage systems in two different BiCMOS technologies is given in this article. The variable-gain current amplifier within the optical front-end is designed by using a modified balanced type of the bipolar junction transistors translinear loop. The predictions of the optical front-end mathematical models are confirmed by the measured results. They show that a 0.6-mm BiCMOS silicon technology implementation with worse bipolar junction transistor parameters (unity-gain frequency, current gain b, and the Early voltage) gives much better stability than a 0.35-mm BiCMOS silicon-germanium technology implementation. As a consequence, the useful measured transimpedance dynamic range of the proposed optical front-end is 17.5 times larger in the 0.6-mm BiCMOS silicon technology than that in the 0.35-mm BiCMOS silicon-germanium technology.