2005
DOI: 10.1109/tvlsi.2004.840407
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A process-tolerant cache architecture for improved yield in nanoscale technologies

Abstract: Abstract-Process parameter variations are expected to be significantly high in a sub-50-nm technology regime, which can severely affect the yield, unless very conservative design techniques are employed. The parameter variations are random in nature and are expected to be more pronounced in minimum geometry transistors commonly used in memories such as SRAM. Consequently, a large number of cells in a memory are expected to be faulty due to variations in different process parameters.In this paper, we analyze th… Show more

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Cited by 176 publications
(132 citation statements)
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“…Agarwal et al propose a process-tolerant cache architecture using a cache line disabling technique, which statically detects and deletes cache lines with faulty cells [18]. In their scheme, the number of faulty cells and their locations are obtained and stored in a configurator by performing a conventional built-in self-test (BIST).…”
Section: Hard Error Management Techniquesmentioning
confidence: 99%
“…Agarwal et al propose a process-tolerant cache architecture using a cache line disabling technique, which statically detects and deletes cache lines with faulty cells [18]. In their scheme, the number of faulty cells and their locations are obtained and stored in a configurator by performing a conventional built-in self-test (BIST).…”
Section: Hard Error Management Techniquesmentioning
confidence: 99%
“…Recently, Agarwal et al proposed a variation tolerant cache architecture [3]. Marculescu and Talpes discuss the merits of globallyasynchronous, locally synchronous (GALS) techniques to design processors under process variation [8].…”
Section: Related Workmentioning
confidence: 99%
“…Their high access speed, high density and low energy consumption make them replacement candidates for SRAM, especially in view of advances made in 3-D stacking technology [6]. 1 One of the issues that continue to be a challenge for using these next-generation memory technologies is their yield. Due to the material and manufacturing process involved, there is greater amount of defects and process variations.…”
Section: Introductionmentioning
confidence: 99%
“…This higher density allows for the use of architectural means to recover yield losses. In this paper, we introduce the salvage cache, a micro-architectural technique for tolerating 1 Some of our references refer specifically to a variant of the MRAM called the spin torque transfer RAM (STT-RAM). We make no such distinction and shall refer to both as 'MRAM'.…”
Section: Introductionmentioning
confidence: 99%