A preliminary study of MIS diodes with nm-thin GaAs-oxide layers

Sugimura, Tomoyuki; Tsuzuku, Tatsutoshi; Katsui, Takayuki; Kasai, Y.; Inokuma, Takao; Hashimoto, Shoushin; Iiyama, Koichi; Takamiya, S.

doi:10.1016/s0038-1101(99)00105-7

Cited by 23 publications

(14 citation statements)

References 3 publications

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“…We measured the leakage currents of Ni/n-GaAs Schottky junctions which were formed after UV and ozone oxidation and removal of the oxidated layers. They showed much larger leakage currents than the Schottky junction formed on an original GaAs surface [8]. This suggests that the oxidation process creates deep levels in the GaAs wafers near the IS interfaces.…”

Section: Discussionmentioning

confidence: 95%

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Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

Iiyama

Kita

Ohta

et al. 2002

IEEE Trans. Electron Devices

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Abstract-A gate insulating layer with single nm-order thickness for suppressing gate leakage current is one of the key factors in extending downsizing limits, based upon the scaling rule, of field-effect-type transistors. We describe the fabrication and characterization of GaAs MISFETs with a nm-thin oxidized layer as the gate insulating layer, which is formed by an ultraviolet (UV) and ozone process. The UV and ozone process forms oxidized GaAs layers near the surface, which effectively suppress the reverse leakage current by several orders of magnitude. The fabricated GaAs MISFET can operate not only in the depletion mode, but also in the accumulation mode up to 3 V of the gate voltage for 8-nm-thick oxidized layer due to the current blocking effect of the oxidized layer. A current cutoff frequency of 6 GHz and a maximum oscillation frequency of 8 GHz are obtained for a GaAs MISFET with a 1-m-long gate length and 8-nm-thick oxidized layer.Index Terms-Compound semiconductors, GaAs, MISFET, selfalign, ultraviolet (UV) and ozone process.

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Section: Discussionmentioning

confidence: 95%

“…We have been studying the MIS gate structure with a nm-thin GaAs-oxide layer prepared by ultraviolet (UV) and ozone treatment [8]. The gate leakage current can be suppressed by five orders of magnitude with an 8-nm-thin GaAs-oxidized layer.…”

mentioning

confidence: 99%

Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

Iiyama

Kita

Ohta

et al. 2002

IEEE Trans. Electron Devices

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“…6. The thickness of the insulating layer was estimated to be 6-8 nm from the oxidation time dependence of the oxide thickness [5], and it is not significantly altered by nitridation. The leakage current in the low reverse bias region is decreased depending on the nitridation time.…”

Section: DC Characteristicsmentioning

confidence: 99%

“…However, the flexibility in material choice and the applicable process techniques of this method are very limited. We have reported that an ultraviolet radiation and ozone (UV and ozone) process forms a nanometer scale GaAs oxide layer that can suppress leakage current [5]. The thickness of this layer is proportional to square root of the process period.…”

mentioning

confidence: 99%

GaAs-MISFETs With Insulating Gate Films Formed by Direct Oxidation and by Oxinitridation of Recessed GaAs Surfaces

Takebe

Nakamura

Paul

et al. 2004

IEEE Trans. Electron Devices

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“…The characteristics of the p-ch type were confirmed in the MOSFET. The thickness of the insulating film was considered to be about 12 nm based on the relationship between the oxidation time and the oxide film thickness [10]. Additional nitriding did not seem to change the insulating film thickness.…”

Section: Fet Device Structure and Fabrication Processmentioning

confidence: 99%

n‐Channel p‐channel enhancement/inversion mode GaAs‐MISFETs with gate insulating layers formed by dry oxi‐nitridation

Tametou

Takebe

Paul

et al. 2006

Electron Comm Jpn Pt II

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SUMMARYTest fabrication of n-channel p-channel enhancement/inversion mode GaAs-MISFET with a GaAs oxy-nitrided gate insulation film formed by nitriding after oxidation of the GaAs surface was performed. In comparison with MOSFET with only oxidation, the pinch-off and hysteresis characteristics are improved in MISFET. The confirmed values of the transconductance are 62 mS/mm (V th ~ 0 V), 41 mS/mm (V th ~ 1 V), and 14 mS/mm [V th = V flat (= 1.1 V)] for the n-channel type. These values are 10 to 100 times those reported previously in GaAs-MOSFET. The result realized for the p-channel type MISFET is about 9 mS/mm.

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A preliminary study of MIS diodes with nm-thin GaAs-oxide layers

Cited by 23 publications

References 3 publications

Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

GaAs-MISFETs With Insulating Gate Films Formed by Direct Oxidation and by Oxinitridation of Recessed GaAs Surfaces

n‐Channel p‐channel enhancement/inversion mode GaAs‐MISFETs with gate insulating layers formed by dry oxi‐nitridation

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