A preliminary study of GaAs solid-state detectors for high-energy physics

Bertin, R.; D’Auria, S.; Papa, C. Del; Fiori, F.; Lisowski, B.; O’Shea, V.; Pelfer, P. G.; Smith, K. M.; Zichichi, A.

doi:10.1016/0168-9002(90)91834-x

Cited by 65 publications

(4 citation statements)

References 4 publications

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“…The use of semi-insulating III-V materials and especially GaAs for the fabrication of high-speed integrated circuits and optoelectronic devices has increased considerably over recent years [1]. Moreover, GaAs has also recently found applications in the field of radiation-hard solid state detectors because of its potential use as minimum ionizing particles and in x-ray detectors [2,3]. In spite of the very encouraging properties of these detectors, the charge collection efficiency (CCE) is generally found to be less than 100%.…”

Section: Introductionmentioning

confidence: 99%

Identification of deep defects in high-resistivity undoped LEC-GaAs irradiated with protons

Seghier

1996

J. Phys. D: Appl. Phys.

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Deep levels related to defects in high-resistivity undoped LEC-GaAs, generated during the growth and by low-fluence proton irradiation () are investigated by means of photo-induced current transient spectroscopy (PICTS). In order to compare effects from defects in the volume and defects in the surface of the material on PICTS observations, sandwich Schottky diodes and planar samples with two ohmic contacts on the front face were studied. Five main traps were observed. In addition to apparent activation energies, it is shown that the nature of carrier traps can also be identified. Irradiation with protons results in the creation of a new electron trap at nearly 0.72 eV below the conduction band. It is also shown that significant modifications in PICTS results may occur when changing the wavelength of the exciting light. In order to check the reliability of the deductions made from PICTS related to the nature of the observed traps, deep level transient spectroscopy (DLTS) measurements were performed under a permanent illumination of the sample. A general comparison and discussion are based on the results obtained from these different techniques.

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Section: Introductionmentioning

confidence: 99%

Identification of deep defects in high-resistivity undoped LEC-GaAs irradiated with protons

Seghier

1996

J. Phys. D: Appl. Phys.

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“…In recent years semi-insulating (SI) GaAs has been the subject of much research attempting to understand its behaviour as a particle detector material [1][2][3][4]. This is important because its speed and radiation hardness make it highly suitable for use in the inner region of the ATLAS detector [5] being constructed for the Large Hadron Collider at CERN.…”

Section: Introductionmentioning

confidence: 99%

An investigation of electric field behaviour in semi-insulating GaAs using current pulses

Williams¹,

Donnelly²

1996

J. Phys. D: Appl. Phys.

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The transient current technique has been used to examine current pulses in semi-insulating (SI) GaAs and comparisons have been made with calculated current pulse shapes obtained by analysing both theoretical and measured electric field shapes. This is the first time that this technique for examining such bulk behaviour has been used with SI GaAs. The results show that the form of the weighting field required to reproduce the experimental current pulse shapes in this case is not the expected 1/d, where d is the active region width, but rather is closer to , where E is the electric field across the detector due to the applied bias and is the bias necessary for the active region to extend fully across the detector.

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“…Since it has an ionization energy near the middle of the bandgap, it pins the Fermi level near midgap resulting in extremely high resistivity. Detectors based on these wafers suffer from losing some of the charge signal generated by the incident radiation [2,4]. It is believed that this degradation in performance is partly a result of carrier trapping by some of or all the intrinsic deep level defects mentioned above, together with effects due to the incomplete penetration of the electric field through the detector [5,6].…”

Section: Introductionmentioning

confidence: 99%

Correlation of the charge collection efficiency of GaAs particle detectors with material properties

Berwick¹,

Brozel²,

Buttar

et al. 1996

Nuclear Instruments and Methods in Physics Research Section A:

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A preliminary study of GaAs solid-state detectors for high-energy physics

Cited by 65 publications

References 4 publications

Identification of deep defects in high-resistivity undoped LEC-GaAs irradiated with protons

Identification of deep defects in high-resistivity undoped LEC-GaAs irradiated with protons

An investigation of electric field behaviour in semi-insulating GaAs using current pulses

Correlation of the charge collection efficiency of GaAs particle detectors with material properties

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