A pre-reaction suppressing strategy for α-Ga₂O₃ halide vapor pressure epitaxy using asymmetric precursor gas flow

Abstract

We report on a high-quality α-Ga2O3 epilayer grown on a sapphire (0001) substrate by suppressing the pre-reaction between the main precursors, GaCl and GaCl3, and O2.

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

“…Among various materials with a wide E g , including aluminum gallium nitride (AlGaN) and zinc oxide (ZnO), α-Ga 2 O 3 is particularly appropriate for large-area processes because of its relatively low growth temperature of about 500 °C. This relatively low temperature of growth or deposition allows not only the use of conventional large-area process methods but also novel Ga 2 O 3 film deposition approaches via thermal oxidation of Ga-based wafers [ 12 , 13 , 14 ]. These unique advantages of α-Ga 2 O 3 along with large-area film growth techniques make α-Ga 2 O 3 promising for use in high-performance UVC and flame photodetectors.…”

“…Attributed to its high E g , α-Ga 2 O 3 has received great interest for ultraviolet (UV) light detectors and specifically deep-UV or UV C-band light (<280 nm) [10,11]. Among various materials with a wide E g , including aluminum gallium nitride (AlGaN) and zinc oxide (ZnO), α-Ga 2 O 3 is particularly appropriate for large-area processes because of its relatively low growth temperature of about 500 • C. This relatively low temperature of growth or deposition allows not only the use of conventional large-area process methods but also novel Ga 2 O 3 film deposition approaches via thermal oxidation of Ga-based wafers [12][13][14].…”