A Practical Design of Lumped, Semi-lumped &amp; Microwave Cavity Filters

Natarajan, Dhanasekharan

doi:10.1007/978-3-642-32861-9

Cited by 19 publications

(6 citation statements)

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“…Conduction by the tunneling of charged particles though double‐barrier structures is also observed in many types of nitrides like the GaN/AlN interface . The double‐barrier system that is composed of one energy barrier at the Ge side and another at the BN side is known as a resonant tunneling diode.…”

Section: Resultsmentioning

confidence: 99%

“…The DUT revealed a systematic operational principle through the two channels that is able to handle a complete filtering circuit duty. In particular, for low ac signal frequencies the C/Ge/BN/C channel behaves as a high passband filter in which all the frequencies in the 2.65–2.75 GHz range are rejected outside the passband but with maximum attenuation . As most of the microwave applications require bandpass/reject filtering circuits the Ge/BN device is promising to be used in base‐station transmitters.…”

Section: Resultsmentioning

confidence: 99%

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Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices

Garni

Qasrawi

2015

Phys. Status Solidi A

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In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50‐μm thick p‐type BN on a 0.2‐μm thick p‐type germanium thin film. The modeling of current–voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak‐to‐valley current ratio of (PVCR) of 63 at a peak (Vp) and valley (Vv) voltages of 1.84 and 2.30 V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0–3.0 GHz displayed a bandstop filter properties with notch frequency (fn) of 2.04 GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted fn and Q to 2.70 GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices

Garni

Qasrawi

2015

Phys. Status Solidi A

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“…The performance characteristics of the filter [9] at ambient temperature, at +70°C and after recovery are shown in Table 6.1. A trend analysis graph could also be drawn for the characteristics.…”

Section: Example Of Applicationmentioning

confidence: 99%

Reliability Evaluation of Equipment

Natarajan¹

2014

Reliable Design of Electronic Equipment

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The proto-models of electronic equipment are subjected to electrical and environmental tests as per the contractual specification of the equipment. The tests are not adequate for providing high level of confidence in the reliability of equipment. An integrated test program is designed for evaluating electrical and environmental performance and the reliability of equipment. Reliability improvement tests are superimposed with the electrical and environmental tests to the extent feasible in the integrated test program. Subjecting proto-models to the integrated test program is defined as the reliability evaluation of equipment. Performance trend analysis, random vibration, thermal shock, and accelerated burn-in are the reliability improvement tests that are explained with examples. The pre-requisites that should be satisfied for ensuring the effectiveness of reliability evaluation program are listed. Definition of Reliability EvaluationThe proto-models of electronic equipment are subjected to electrical and environmental tests as per the contractual specification of the equipment. The tests are adequate for verifying or demonstrating compliance to the specifications, but they are not adequate for providing high level of confidence in the reliability of the equipment. An integrated test program is designed for evaluating electrical performance, environmental performance, and the reliability of equipment. Reliability improvement tests are superimposed with the electrical and environmental tests to the extent feasible in the integrated test program. Subjecting the proto-models of equipment to the integrated test program is defined as the reliability evaluation of equipment. The test program complements the overstress analyses on the protomodels. Reliability evaluation should not be misconstrued as Mean Time Between Failures (MTBF) evaluation of equipment.

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“…Fifth-order combline filters centered at fo and fp are designed using the procedure described in [20] and [21]. The output combline filter is designed to be wideband (leading to a low insertion loss) while the pump combline filter is designed to be narrow-band, resulting in a high rejection at fo while having a moderate insertion loss.…”

Section: Combline Filters' Design and Simulationsmentioning

confidence: 99%

Broadband Parametric Impedance Matching for Small Antennas Using the Bode-Fano Limit: Improving on Chu’s limit for loaded small antennas

Loghmannia

Manteghi

2022

IEEE Antennas Propag. Mag.

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In this work, a parametric up-converter amplifier is introduced as a wideband impedance-matching network. Chu's limit restricts the minimum Q-factor of unloaded small antennas. However, the practical bandwidth (BW) of small antennas is defined by their loaded Q-factor. By connecting a small antenna to an amplifier with a real input impedance that is several times greater than the radiation resistance of the antenna, we propose increasing the return loss, which leads to a reduction in the loaded Q-factor and an increase in the BW. In addition, a parametric amplifier is used because, in comparison with transistor amplifiers, it offers low-noise characteristics. The gain of the low-noise parametric amplifier compensates for the loss due to the imposed mismatch. Our simulation result shows BW improvements up to 32 times can be accomplished by trading 2 dB of noise figure (NF), compared to the 15 dB suggested by Chu's limit for a lossy antenna.

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A Practical Design of Lumped, Semi-lumped & Microwave Cavity Filters

Cited by 19 publications

References 0 publications

Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices

Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices

Reliability Evaluation of Equipment

Broadband Parametric Impedance Matching for Small Antennas Using the Bode-Fano Limit: Improving on Chu’s limit for loaded small antennas

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