A power-efficient all-digital IR-UWB transmitter with configurable pulse shaping by utilizing a digital amplitude modulation technique

Geng, Shuli; Chen, Xican; Rhee, Woogeun; Kim, Jong-Jin; Kim, Dong-Wook; Wang, Zhihua

doi:10.1109/ipec.2012.6522633

Cited by 7 publications

(11 citation statements)

References 6 publications

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“…The all-digital architecture [12] suffers from the inaccuracy of the pulse center frequency since the delay line based pulse generation is sensitive to PVT variation. The carrier-based architecture with analog shaping [13] can well define the pulse center frequency but lacks of flexibility in the pulse shape.…”

Section: Proposed Ir-uwb Transmitter Architecturementioning

confidence: 99%

“…An array of digital power amplifier (DPA) cells is controlled by an array of selected digital phases which are generated by the baseband PLL. The proposed carrier-based plus digital pulse shaping (DPS) architecture can thus benefit from the advantages of the two ones in work [12,13]. The pulse center frequency tunability as well as the DPS flexibility is obtained.…”

Section: Proposed Ir-uwb Transmitter Architecturementioning

confidence: 99%

“…The pulse center frequency tunability as well as the DPS flexibility is obtained. Different from [12], all the digital blocks in Fig. 4 works at the baseband frequency and do not need to deal with the ultra-short pulses.…”

Section: Proposed Ir-uwb Transmitter Architecturementioning

confidence: 99%

“…10. Each cell which is similar to the work in [12] comprises of an AND gate and an NMOS transistor. The OOK modulation is performed by the AND gate which connects or disconnects the transistor gate with the control word PCDP<0:5>.…”

Section: Isi Mitigated Digital Envelop Generationmentioning

confidence: 99%

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A 7.6 mW 2 Gb/s Proximity Transmitter for Smartphone-Mirrored Display Applications

Liu¹,

Liu²,

Rhee³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-This paper describes a high data rate proximity transmitter design for high resolution smartphone-mirrored display applications. A 2 Gb/s transmitter is designed with a low transmission power of -70 dBm/MHz and a wide bandwidth of nearly 3 GHz. A digital pre-correction method is employed in the transmitter to mitigate the inter-symbol interference problem. A carrier-based digital pulse shaping and a reconfigurable digital envelope generation methods are employed for robust operation by utilizing 20 phases from a 2 GHz phaselocked loop. A 6.5-9.5 GHz transmitter implemented in 65 nm CMOS achieves the maximum data rate of 2 Gb/s, consuming only 7.6 mW from a 1 V supply. IndexTerms-Smartphone-mirrored display, proximity communication, ultra-wideband (UWB), impulse-radio UWB (IR-UWB), pulse shaping

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Section: Proposed Ir-uwb Transmitter Architecturementioning

confidence: 99%

Section: Proposed Ir-uwb Transmitter Architecturementioning

confidence: 99%

Section: Proposed Ir-uwb Transmitter Architecturementioning

confidence: 99%

Section: Isi Mitigated Digital Envelop Generationmentioning

confidence: 99%

See 2 more Smart Citations

A 7.6 mW 2 Gb/s Proximity Transmitter for Smartphone-Mirrored Display Applications

Liu¹,

Liu²,

Rhee³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

Self Cite

View full text Add to dashboard Cite

show abstract

“…Instead of the analog DC offset cancellation circuit, the DC offset reset switch and its control circuit are proposed to eliminate the noise perfectly without the care of circuit stability and bandwidth limitation. The digitally synthesized impulse generator is adopted and it can easily adjust the center frequency and the bandwidth with SPI control [10,11]. The fabricated IR-UWB RF transceiver supports up to 12.636 Mbps, which is the maximum data rate in IEEE 802.15.6 based WBAN system.…”

Section: Introductionmentioning

confidence: 99%

An IR-UWB RF transceiver for high-rate WBAN applications

Park

Jang

Kim

et al. 2015

IEICE Electron. Express

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An IR-UWB RF transceiver IC compliant with IEEE 802.15.6 WBAN is implemented in 0.18 µm CMOS technology. To achieve the low power and low complexity, the OOK receiver architecture using energy detection and the digitally synthesized transmitter are employed. For the rejection of the undesired interferers and DC offset, the RF active notch filter and the proposed DC offset reset switch are integrated and improve the sensitivity significantly. The measured sensitivity of the receiver is −87.5 dBm at 4 GHz with 1.579 Mbps. The power consumption of the receiver and transmitter are 57 mW and 0.4 nJ/bit respectively.

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