2008
DOI: 10.1016/j.tsf.2007.05.016
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A positron annihilation study on the defect properties of doped diamond films

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Cited by 6 publications
(3 citation statements)
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“…The defects probed by positrons are vacancy-like defects in different diamond films [10][11][12]. The vacancy concentration in the S-doped diamond film is higher than that in undoped diamond films.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The defects probed by positrons are vacancy-like defects in different diamond films [10][11][12]. The vacancy concentration in the S-doped diamond film is higher than that in undoped diamond films.…”
Section: Resultsmentioning
confidence: 99%
“…The S and W parameter as a function of positron implantation energy were measured for graphite, nanophase C, undoped, B-doped and S-doped diamond films by the slow positron beam of the University of Trento [9,10].…”
Section: Methodsmentioning
confidence: 99%
“…Positron annihilation technique (PAT) can provide unique information about defects and has many advantages in structural characteristic. It is a nondestructive and effective method to detect the information of defects [8], whereas there are few studies about SFMO using this technique recently. Photodoping, which remains the component and structure of material unchanged, is an effective way to improve the property [9,10].…”
Section: Introductionmentioning
confidence: 99%