A porous GaN/MoO₃ heterojunction for filter-free, ultra-narrowband ultraviolet photodetection

Abstract

Commonly, a narrowband photodetector that can detect specific wavelength is achieved via integrating a broadband photodetector with an external optical filter. However, this integration greatly increases the structural complexity and...

Narrowband photoresponse of a self-powered CuI/SrTiO3 purple light detector with an ultraviolet-shielding effect

“…35,36 Self-powered narrowband PDs can detect specific wavelengths without needing an optical filter, and show high noise immunity and high potential for secure optical communication systems and high quality biological imaging. 30,31,37,38 In addition, UV shielding is highly desired to protect against the ultraviolet irradiation and the increasing light pollution. 39 Therefore, this power-free, filter-free and UV-free PD shows considerable promise in real-life applications.…”

“…Recently, the GaN/MoO 3 heterojunction and the CuGaTe 2 /Si p–n junction PDs all demonstrate self-powered characteristics and narrowband response because of nonequilibrium photogenerated carrier transport in the p–n junction region. 30–33 In addition, it can be found through comparison that the photo-response curve of the CuI/STO device is steeper (<390 nm) than that of the STO device, and the photo-response curve of the CuI/STO device at 0 V is much steeper (<390 nm) than that of the device at 5 V. The CuI film deposited on the STO film can decrease the light penetration distance. Meanwhile, part of the photo-generated electrons of STO may be quenched by the holes of CuI upon light irradiation (<390 nm).…”

Long‐Term UV Detecting Wearable Patches Enabled by III‐N Compound Semiconductor‐Based Microphotodetectors

“…As shown in Tables S2 and S4 in the Supporting Information, the developed InGaN μPD exhibits 3.2-108.9 times superior responsivity compared to other UV-A detecting photodetectors with different active materials and junction types. [37][38][39][40][41][42][43][44][45] The superior optoelectrical properties of our μPDs are attributed to the designed InGaN/GaN layers and Schottky diode structure with the IDEs. The 923 °C-grown InGaN/GaN layers possessed high quality with 3.15 eV bandgap energy and a sharp PL peak (FWHM: 16.04 nm).…”

The development and applications of nanoporous gallium nitride in optoelectronics: a review

“…By combining with optical filter, optical detector can detect the signal of specific wavelength. It has broad application prospect in secure optical communication system [115]. Another study shows that embedding methyl lead bromide perovskite (CH 3 NH 3 PbBr 3 or MAPbBr 3 ) into NP-GaN will result in unique optical and electrical properties which can overcome the inherent limitations of the material [116].…”