A Polyanionic Strategy to Modify the Perovskite Grain Boundary for a Larger Switching Ratio in Flexible Woven Resistive Random-Access Memories

Abstract

The intergranular interface modification of organic–inorganic hybrid perovskites (OHP) is an important issue to regulate the flexibility, stability, and resistive switching (RS) performance of resistive random-access memories (RRAMs). A novel strategy of polymer additives for OHP intergranular interface modification is explored in this work with the polyanionic backbone to improve the distribution of cage-shaped cavity molecules at the perovskite grain boundaries. Specifically speaking, poly­(1-adamantylammonium acrylate) (PADAm) is first synthesized through the acid–base reaction of polyacrylic acid with 1-adamantylamine to simultaneously realize the introduction of a cage-shaped cavity molecule and the polyanionic backbone. Herein, organic ammonium cations 1-adamantylammonium (ADNH3 +) in PADAm are applied as the cage-shaped cavity molecules to tune the dielectric property by being anchored at the perovskite grain boundaries. Meanwhile, polyacrylic anions in PADAm play the role of the polyanionic backbone to produce the more uniform distribution of ADNH3 +. Simultaneously, the flexibility and stability of OHP RRAM devices are also improved due to the introduction of the polyanionic backbone. Consequently, the 4% ADNH3I-modified planar device exhibits the stable nonvolatile RS behavior with an on/off ratio of ∼104, even with one-month exposure under an ambient environment. Importantly, the introduction of PADAm in the flexible fibrous crosspoint of functional fiber Al@MAPbI3:PADAm and bare Al fiber further increases the on/off ratio to 108 due to the effectively improved distribution of hollow cage-shaped ADNH3 + at the perovskite intergranular interfaces together with the application of the fibrous crosspoint device configuration. Especially, these excellent crosspoint RRAM devices can be integrated into the woven fibrous RRAM array in the thermal plastic packaging configuration. In addition, the excellent multilevel RS behavior can also be realized in the woven fibrous RRAM array, indicating potential high-density data storage. This work provides a novel strategy of polymer additives bearing the polyanionic backbone to improve the flexibility, stability, and RS performance of perovskite RRAM devices.

Cs3Bi2Br9 Halide Perovskite Nanostructure/Polymer Composite Films Resistive Memory

“…The associated placing technique necessitates a bigger V SET since the resistivity of the film grows as the PMMA concentration does as well. 37 Figure 3a−b depicts the volatility distribution of the device transition voltage after analyzing the I−V curve data from the device's numerous cycles. It has been discovered through adjusting the PMMA layer's concentration that, when it is less than 15 mg/mL, the variation of the device's transition voltage steadily reduces as the PMMA concentration rises.…”

“…It might be due to the fact that PMMA functions as an interfacial barrier layer, increasing the film’s initial resistance. The associated placing technique necessitates a bigger V SET since the resistivity of the film grows as the PMMA concentration does as well …”

Polyethylene-Glycol-Modified Halide Perovskite for Enhancing the Switching Ratio and Cycling Stability of Resistive Random Access Memory

“…Currently, researchers use various methods to better regulate the particle size of perovskite: antisolvent treatment, 22 adjusting the precursor ratio, 23 changing the annealing temperature of the film, 24 and introducing additives. 25−27 Among them, the use of non-conductive polymers as additives to modulate the perovskite films seems to be a more effective means, 28,29 which not only act as nucleation templates to modulate the particle size and crystalline quality of perovskite by virtue of its reticular structure but also cross-link the perovskite particles to strengthen the interfacial contacts, thus enhancing the surface morphology and device performance of the films.…”

“…Considering the effect of grain boundaries on the migration of halide ions in HP thin films, Park and Lee and Lee et al attempted to adjust the particle size to regulate the migration path of halide ions, found that the number of grain boundaries is inversely proportional to the size of perovskite particles, and increased the switching ratio of the device by significantly increasing the particle size and reducing the number of grain boundaries. Currently, researchers use various methods to better regulate the particle size of perovskite: antisolvent treatment, adjusting the precursor ratio, changing the annealing temperature of the film, and introducing additives. − Among them, the use of non-conductive polymers as additives to modulate the perovskite films seems to be a more effective means, , which not only act as nucleation templates to modulate the particle size and crystalline quality of perovskite by virtue of its reticular structure but also cross-link the perovskite particles to strengthen the interfacial contacts, thus enhancing the surface morphology and device performance of the films.…”

Supramolecular Framework Constructed by Dendritic Nanopolymer for Stable Flexible Perovskite Resistive Random‐Access Memory

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lasers, [9] photodetectors, [10] and artificial synapses [11] due to their adjustable band gap, multilevel storage, remarkable optical absorption, long electron hole diffusion length, and dielectric polarization characteristics. [1,[12][13][14][15] Their superior photoelectronic characteristics are induced by the unique electronic characteristics of inherent defects. Especially, the movement of inherent defects plays a key role in the nonvolatile memristors.

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