Proceedings of 16th IEEE/CPMT International Electronic Manufacturing Technology Symposium
DOI: 10.1109/iemt.1994.404694
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A PoF approach to addressing defect-related reliability

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Cited by 4 publications
(12 citation statements)
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“…Bond pad contamination [16] is caused by wafer processing, plastic package outgassing or epoxy die attach outgassing, and bleedout. Contaminants accelerate failure by reducing the onset temperature or the time to failure due to intermetallic growth.…”
Section: Failure Modes Identified As a Bonding Defectmentioning
confidence: 99%
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“…Bond pad contamination [16] is caused by wafer processing, plastic package outgassing or epoxy die attach outgassing, and bleedout. Contaminants accelerate failure by reducing the onset temperature or the time to failure due to intermetallic growth.…”
Section: Failure Modes Identified As a Bonding Defectmentioning
confidence: 99%
“…Bond pad cratering [16] is the result of microcracks formed in the silicon and oxide layers under the bond pads due to stresses introduced during the dynamic force of the gold ball at touch-down impact, the static force applied after touchdown, ultrasonic energy, mechanical vibrations before or after bonding, and the hardness of the gold ball. The effect of cratering is a reduction in the strength of the silicon oxide layers under the bond pads.…”
Section: Failure Modes Identified As a Bonding Defectmentioning
confidence: 99%
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