A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Fu, Gongkang; Chandra, Abhijit; Guha, S.; Subhash, Ghatu

doi:10.1109/66.964328

Cited by 135 publications

(16 citation statements)

References 38 publications

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“…In the chemical mechanical polishing of metals, the material removal rate of the workpiece surface increases with the increase of abrasive grain size [ 26 ]. The larger the abrasive grain size, the higher the material removal rate during polishing, however the final processing surface is worse, due to the larger grain size of abrasives in producing deeper scratches.…”

Section: Resultsmentioning

confidence: 99%

Research on Chemical Mechanical Polishing Technology for Zirconium-Based Amorphous Alloys

et al. 2023

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Crystallization often occurs in the processing of amorphous alloys, causing the materials lose their excellent properties. The study adopts chemical mechanical polishing of amorphous alloys, presenting the effect of the rotational speed of the polishing turntable, size of abrasive, polishing pressure, and oxidant concentration. The Taguchi method is used to find the best processing parameters, and AFM is used to characterize the machined material surface. At the same time, XPS is used to detect the change of oxide film composition with the addition of oxidant. The results indicate the optimum process parameters: rotational speed of the polishing turntable is 75 r/min, polishing pressure is 28.3 kPa, the size of abrasive is 0.5 μm, and the size of abrasive is a significant factor affecting surface roughness Sa. In addition, as the size of abrasive increases, the material removal rate increases while the surface roughness Sa increases. At pH 10, with an abrasive particle size of 0.5μm, as the H2O2 concentration increases, the MRR first rapidly decreases at 0.21 wt.% H2O2, and then gradually increases, while the Sa decreases. Furthermore, with the addition of oxidant, the main composition of the surface oxide film changes from oxide to hydroxide, and the contents of Zr4+ and Cu0/Cu1+ elements increase. The findings can provide a feasible chemical mechanical polishing process for zirconium-based amorphous alloys to obtain a satisfactory polishing effect.

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Section: Resultsmentioning

confidence: 99%

Research on Chemical Mechanical Polishing Technology for Zirconium-Based Amorphous Alloys

et al. 2023

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“…Similar trends have been reported by several researchers. 17,29,30 Figure 8b shows a comparison of experimental MRR of silicon dioxide with the MRR predicted by the model as a function of increasing downforce for an average particle size of 80 nm. The MRR is observed to increase linearly with increasing down force.…”

Section: Resultsmentioning

confidence: 99%

A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

Akbar

Ertunç

2021

ECS J. Solid State Sci. Technol.

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Chemical mechanical polishing (CMP) is a process used to obtain planarized surfaces in microelectronic device manufacturing. The planarization is achieved by material removal from the wafer surface by synergistic effect of chemical and mechanical actions. The material removal rate (MRR) in chemical mechanical processes have a linear dependency on applied down pressure. However, some experimental studies have reported nonlinear relationship between MRR and applied pressure. The nonlinearity can be attributed to complex interactions among the wafer, pad, abrasive particles, and chemical agents in the slurry. Therefore, in modelling CMP processes, coupling of both the chemical and mechanical actions is imperative to provide insight into the nonlinear behavior of MRR, because treating the chemical effects only as a mere means of softening the wafer surface fails to explain the nonlinear behavior of MRR in silicon dioxide CMP. Here, we present a model that couples micro-contact mechanics with diffusion of slurry into the wafer and predict MRR in CMP of silicon dioxide. The model is validated with experimental results available in the literature. Moreover, the developed model may be used to explain the nonlinear increase in MRR of silicon dioxide with increasing applied pressure.

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“…The structure of CMPSim is shown in Figure 3, and CMPSim predictions have been verified against several experimental observations. 5,13…”

Section: Analytical Step Height Reduction Modelmentioning

confidence: 99%

“…In this period, however, process complexity in terms of the number of CMP step applications and its uniqueness has also grown by orders of magnitude. [1][2][3] CMP has been extensively investigated at different scales: particle scale, [4][5][6][7] die scale, [8][9] and wafer scale. [10][11] Chandra et al [12][13] investigated the issue of defectivity and provided a multi-scale representation.…”

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confidence: 99%

Mixed Strategy Combination of Pressure and Velocity Control for Chemical Mechanical Planarization of Patterned Wafers

Chandra

Bastawros

et al. 2015

ECS J. Solid State Sci. Technol.

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The Preston equation suggests interoperability of material removal rate (MRR) by either pressure or velocity. Traditionally, planarization is pursued by pressure control. A novel velocity control strategy for a single step on a blanket wafer is recently proposed. The effectiveness of both strategies on patterned wafers is numerically investigated here, using the MIT Mask layout. Superiority is observed to be pattern dependent, scaling with MRR and material choice. However, improved quality at feature scale induces deterioration at the die scale. Scratch generation propensity, which is a micro- or even nano-scale phenomenon, is typically invariant to macro-level control strategies. A mixed control strategy produces better results in terms of finish quality and productivity, by attaining the targeted local and global planarization in less polishing time, compared to individual strategies.

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A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Cited by 135 publications

References 38 publications

Research on Chemical Mechanical Polishing Technology for Zirconium-Based Amorphous Alloys

Research on Chemical Mechanical Polishing Technology for Zirconium-Based Amorphous Alloys

A Coupled Material Removal Model for Chemical Mechanical Polishing Processes

Mixed Strategy Combination of Pressure and Velocity Control for Chemical Mechanical Planarization of Patterned Wafers

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