A Plasmonic Optoelectronic Resistive Random‐Access Memory for In‐Sensor Color Image Cryptography
Quan Yang,
Yu Kang,
Cheng Zhang
et al.
Abstract:The optoelectronic resistive random‐access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in the hardware level in‐sensor image cryptography. In this work, 2D hexagonal boron nitride based optoelectronic RRAM is fabricated with semitransparent noble metal (Ag or Au) as top electrodes, which can simultaneous capture color image and generate physically unclonable function (PUF) key for in‐sensor color image cryptography. Surface plasmons… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.