A planar wideband 80-200 GHz subharmonic receiver

Kormanyos, B.K.; Ostdiek, P. H.; Bishop, W.L.; Crowe, T.W.; Rebeiz, Gabriel M.

doi:10.1109/22.247918

Cited by 61 publications

(26 citation statements)

References 16 publications

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“…The receiver is mounted on a high-resistivity Silicon lens, eliminating the power loss to substrate modes and making the pattern unidirectional into the dielectric lens [6]. From previous experience [7], [8], the relative dielectric constants of silicon ( E , = 11.7) and GaAs (t, = 12.8) are close enough that no substrate modes and associated power loss occur when a GaAs wafer is placed on a silicon lens. The power radiated to the backside is minimal, only 9% (0.4 dB), and therefore no backing cavity is used to recover this power loss.…”

Section: Designmentioning

confidence: 99%

A monolithic 250 GHz Schottky-diode receiver

Gearhart

Rebeiz

1994

IEEE Trans. Microwave Theory Techn.

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A 250 GHz monolithic Schottky-diode receiver based on a double-slot antenna is presented. The double-slot antenna is placed on an extended hemispherical high-resistivity silicon substrate lens. The measured DSB conversion loss and noise temperature at 258 GHz are 7.8 & 0.3 dB and 1600 f l00K for the antenna-mixer, respectively. A nonoptimal polyethylene Xd/4 matching-cap layer for the silicon lens improves the conversion loss and noise temperature by 1 dB, and another 0.7 dB improvement could be obtained with the use of a more optimal matching cap layer. The uniplanar double-slot antenna receiver is less than 0.3 x 1 mm in size including the IF filter and represents the first fully monolithic 250 GHz receiver to date. The measured performance is within 2-3 dB of the best 200' GHz waveguide receivers using planar Schottky diodes.' I. INTRODUCTLON"GRATED-CIRCUIT receivers consisting of a planar I antenna integrated with a matching network and a planarSchottky-diode or a three-terminal device offer many advantages over waveguide-based receivers at millimeter-wave frequencies. They are smaller, lighter, and less expensive to build than waveguide systems and can be easily produced in. large numbers for millimeter-wave applications. A potential candidate for excellent millimeter-wave performance is the double-slot antenna [2]- [4]. In this work, a planar Schottky diode and a CPW-line matching network are integrated with a double-slot antenna on GaAs to form a fully monolithic Schottky-diode receiver. The monolithic integration should result in minimum parasitic capacitance and series resistance. After fabrication, the double-slot receiver is placed on an extended hemispherical high-resistivity silicon substrate lens to result in high-gain patterns with high Gaussian coupling efficiency [5]. This design requires no via holes or a backing ground-plane. The GaAs substrate is therefore not thinned down to 100 pm (or less) thereby increasing the yield of the fabrication process. The application areas for this receiver are in millimeter-wave imaging arrays for remote-sensing and radio-astronomical systems. I 190 p Polveth Monolithic Double-slot Receiver 630 CaAs pm-thick wafer 570p"hick high-p Si wafer Ma

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Section: Designmentioning

confidence: 99%

A monolithic 250 GHz Schottky-diode receiver

Gearhart

Rebeiz

1994

IEEE Trans. Microwave Theory Techn.

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“…The elliptical lens couples well to a Gaussian-beam at its minimum waist, where there is a planar equiphase front [1]. Most of the work reported thus far used high-permittivity low loss material hemispherical lenses, such as silicon and alumina lenses, because higher dielectric constant yields a more exact geometrical approximation to an elliptical lens and a wider multiple-beam coverage range [1][2][3] or low-permittivity low loss plastic material elliptical lenses [4] because they are low cost and easily machinable with standard tools. In the present application, the dielectric constant of the lens material needs to be chosen carefully.…”

Section: Introductionmentioning

confidence: 98%

“…In addition, this approach is capable of increasing the effective aperture of a single planar radiating element from several mm 2 to several cm 2 and suppressing surface waves, which is an important consideration at mm-wave frequencies. The concept of quasioptical beamforming by means of substrate-lens antenna combinations is well established and extensively explored with a focus on applications in radio astronomy and remote sensing; see, for example [1][2][3]. Attempts have also been made to apply the substrate lens technique for wireless communications at 30 GHz [4].…”

Section: Introductionmentioning

confidence: 99%

“…The substrate dielectric lens shapes can be hemispherical, hyper-hemispherical, or ellipsoidal and researchers have placed various antennas on these lenses for receiver applications [1][2][3]. An elliptical lens antenna is an ellipsoid cut off at a plane perpendicular to its major axis at its second geometric focus, with a planar antenna mounted on the flat surface.…”

Section: Introductionmentioning

confidence: 99%

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Q‐band to V‐band 1D and 2D elliptical lens antenna arrays

Yang

Domier

Luhmann

2007

Micro & Optical Tech Letters

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An investigation of the receiving properties of both 1D 13-element and 2D 8 ϫ 4-element dual dipole antenna arrays on an elliptical MACOR lens from Q-to V-band is reported. Theoretical and measurement results agree well. The intended application is for millimeter wave plasma radar reflectometric imaging, although the results have broader applicability (Munsat et al., Rev Sci Instrum 74 (2003) 1426 -1432.

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“…In addition, this approach is capable of increasing the effective aperture of a single planar radiating element from several mm 2 to several cm 2 and suppressing surface wave, which is an important consideration at mm-wave frequencies. The concept of quasioptical beamforming by means of substrate-lens antenna combinations is well established and extensively explored with a focus on applications in radio astronomy and remote sensing at 100-150 GHz; see, for example [1][2][3]. Attempts have also been made to apply the substrate lens technique for wireless communications at 30 GHz [4].…”

Section: Introductionmentioning

confidence: 98%