A Planar Gunn Diode Operating Above 100 GHz

Khalid, A.; Pilgrim, N. J.; Dunn, G. M.; Holland, M.; Stanley, C.R.; Thayne, Iain; Cumming, David R. S.

doi:10.1109/led.2007.904218

Cited by 87 publications

(81 citation statements)

References 12 publications

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“…In recent years, planar Gunn diodes have shown consistent improvements in frequency towards the THz region of electromagnetic spectrum [3]. The first hetero-structure AlGaAs/GaAs based planar Gunn diode operation above 100 GHz was demonstrated in 2007 [19]. Higher frequency of operation is limited by the saturation velocity in GaAs [20].…”

Section: Introductionmentioning

confidence: 99%

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Khalid

Dunn

Macpherson

et al. 2014

Journal of Applied Physics

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The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental modethe shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600nm and 700nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 µW was obtained from a 600 nm long ×120 µm wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible -the Monte Carlo model used predicts power output at frequencies over 300 GHz.

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Section: Introductionmentioning

confidence: 99%

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Khalid

Dunn

Macpherson

et al. 2014

Journal of Applied Physics

Self Cite

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“…The above results are encouraging for the future implementation of high-power, high-frequency, low phase noise MMIC oscillators. The generated power is relatively low, being however in the same order as the power of the first high-frequency planar Gunn diode [1]. Future development of the layer structure is expected to enhance significantly the performance of both devices.…”

Section: B Results and Discussionmentioning

confidence: 98%

“…The implementation of the first planar Gunn diodes operating above 100 GHz [1] has been inspired by the first simulation [15] and experimental results [16] that presented Gunn oscillations on HEMT layer structures. Thus, the operation of planar Gunn diodes using a pHEMT layer structure was also examined, in parallel with the process of the combined wafer.…”

Section: The Side-by-side Approachmentioning

confidence: 99%

“…The first planar Gunn diodes presenting oscillations above 100 GHz [1] demonstrated the capability of integrating millimeter-wave sources with monolithic microwave integrated circuits (MMICs). The development of the device in subsequent years was focused on the modification of the layer structure for the reinforcement of the power performance since the initial diodes presented relatively low generated power equal to -43 dBm.…”

Section: Introductionmentioning

confidence: 99%

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Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

Papageorgiou

Khalid

et al. 2014

Solid-State Electronics

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“…3,4 The upper frequency of radiation produced by the Gunn effect for traditional semiconductors such as GaAs and InP is on the order of 100 GHz, [5][6][7] determined by the inter-valley scattering which is relatively weak.…”

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First-principles study of high-field-related electronic behavior of group-III nitrides

et al. 2014

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Based on accurate band structures of AlN, GaN, and InN we report physical quantities related to high-field electron transport, including effective masses, energies of inflection points, and satellite valleys in the conduction band. The band structures are obtained from density functional theory with a hybrid functional, as well as many-body perturbation theory based on the G 0 W 0 approach.We also calculate the electron-energy relaxation time due to the electron-LO-phonon interaction within the Fröhlich model. Our results provide insights into the physical origin of negative differential resistance and the high-frequency characteristics of group-III nitrides and their alloys under high-field operation. The high-field performance of GaN-based electronic devices is related to two properties of the conduction band (CB): the nonparabolicity of the main CB valley characterized by an inflection point, and the existence of satellite valleys. Both of these can give rise to a negative differential resistance (NDR), where the drift velocity initially increases with the applied electric field to reach a maximum and then decreases with further increase in the field.Inter-valley electron transfer to satellite valleys with heavier effective masses can generate an electron-transfer NDR, the so-called Gunn effect. 3,4 The upper frequency of radiation produced by the Gunn effect for traditional semiconductors such as GaAs and InP is on the order of 100 GHz, 5-7 determined by the inter-valley scattering which is relatively weak.On the other hand, under high field electrons can be excited above the inflection point and their semiclassical effective masses become negative. Attaining the maximum group velocity at the inflection point, electrons start to slow down under an applied field and can induce NDR even in the absence of any scattering mechanism. 8 The frequency of radiation associated with the negative-mass region close to the inflection point is determined by intraband scattering and the strength of the electron-phonon interaction, and the characteristic frequency of radiation by this negative-mass effect can be on the order of THz. 9,10 The relative ordering of the inflection point and the energy minima of the satellite valleys determines which mechanism dominates the velocity-field characteristics. Accurate band structures are thus crucial to address this issue. The empirical pseudopotential method (EPM) has been widely used to calculate nitride bands structures, 11,12 and several reports on high-field transport of electrons in GaN and AlN have been published. 11,13-16 Most EPM band-structure calculations identify the lowest satellite CB valley for GaN to be at the U point, along the L-M direction, but its precise position and energy vary widely among the different reports. In addition, EPM calculations usually produce an incorrect electron effective mass. In the present work, we obtain full band structures of nitride materials (including AlN, GaN, and InN) from advanced first-principles techniques including the hy...

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A Planar Gunn Diode Operating Above 100 GHz

Cited by 87 publications

References 12 publications

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

First-principles study of high-field-related electronic behavior of group-III nitrides

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