A Physically Based, Scalable MOS Varactor Model and Extraction Methodology for RF Applications

Victory, James; Yan, Z.X.; Gildenblat, G.; McAndrew, Colin C.; Zheng, Jian

doi:10.1109/ted.2005.850693

Cited by 38 publications

(15 citation statements)

References 25 publications

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“…7 that for larger feature technologies the capacitance range increases, while the resistance range decreases. The reduction of the resistance range in the larger feature technologies is caused by a reduction of the quality factor of M 2 due to the larger gate length [37]. The gate width also increases the capacitance range proportionally [37].…”

Section: A Design Of Metasurface Loading Elementsmentioning

confidence: 99%

“…The reduction of the resistance range in the larger feature technologies is caused by a reduction of the quality factor of M 2 due to the larger gate length [37]. The gate width also increases the capacitance range proportionally [37]. It is obvious that there is a compromise to be made when choosing the technology.…”

Section: A Design Of Metasurface Loading Elementsmentioning

confidence: 99%

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Toward the Realization of a Programmable Metasurface Absorber Enabled by Custom Integrated Circuit Technology

et al. 2020

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The realization of a programmable metasurface, enabled by a custom application-specific integrated circuit (ASIC), is presented in this paper. The ASIC is used to provide an adaptive complex impedance load to each of the metasurface unit cells. Various technology nodes are analyzed for the implementation of tunable complex impedance loading elements before one is selected for the final implementation, in which four complex loads are placed within each integrated circuit, and each load is controlled by two digital-toanalog converters. Furthermore, the ASICs populate the back of the metasurface to form a mesh network to enable programmability. The paper includes practical limitations that affect the realization, as well as an example adaptive metasurface absorber that builds upon the practical tuning range of the ASIC. Perfect absorption for both transverse electric and transverse magnetic polarization is demonstrated. INDEX TERMS Metasurfaces, ASIC, programmable RF load, perfect absorption, reconfigurable.

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Section: A Design Of Metasurface Loading Elementsmentioning

confidence: 99%

Section: A Design Of Metasurface Loading Elementsmentioning

confidence: 99%

Toward the Realization of a Programmable Metasurface Absorber Enabled by Custom Integrated Circuit Technology

et al. 2020

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“…A MOSFET varactor model is presented in [27] for multiple finger devices. For a particular frequency range, the complex MOSFET varactor ( Fig.…”

Section: ) Varactor Implementationmentioning

confidence: 99%

Integrated-Circuit Enabled Adaptive Metasurface Absorber With Independent Tuning of Orthogonal Polarization Planes

2020

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A customized integrated circuit (IC) is presented that is designed specifically for implementing complex-impedance metasurface loading elements. This IC enables innovative metasurface designs that target absorption applications. Through targeted electronic and electromagnetic co-design, we propose an innovative metasurface unit cell to implement a tunable metasurface absorber. We demonstrate the proposed loading element performance range through a fabricated custom IC. Experimental measurements of the fabricated loading element circuit in a 180 nm CMOS technology are used in an electromagnetic simulator to demonstrate tunable perfect absorption at normal and oblique angles of incidence for both transverse electric (TE) and transverse magnetic (TM) polarizations. With four of the proposed loading elements, realized on a custom IC, the metasurface absorber is shown to control independently and simultaneously the absorption of both TE and TM polarizations. INDEX TERMS Tunable metasurface, custom integrated circuit, metasurface load, 180nm technology.

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“…Nonlinear metal-oxide-semiconductor (MOS) capacitors used as variable reactors, known as varactors, are nowadays a part of many radio frequency circuit applications, such as voltage-controlled oscillators [1][2][3][4][5][6][7][8]. The first step in the development of a varactor model is to extract an accurate small-signal model, which can be also useful for building a large-signal model [9].…”

Section: Introductionmentioning

confidence: 99%

“…The first step in the development of a varactor model is to extract an accurate small-signal model, which can be also useful for building a large-signal model [9]. Typically, the most accurate models are the physical models describing the physical phenomena taking place in the device [4]. However, as they require a lot of parameters to be extracted and detailed knowledge about many fabrication parameters, which are not usually available to the circuit designers, most often varactor models are based on a simpler representation given by the equivalent circuit model [3,9,10].…”

Section: Introductionmentioning

confidence: 99%

Microwave neural modeling for silicon FinFET varactors

Marinković

Crupi

Schreurs

et al. 2014

Int J Numerical Modelling

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SUMMARYThe FinFET architecture is currently attracting increasing attention to enable further downscaling of the complementary metal-oxide-semiconductor (CMOS) technology. The interest towards the FinFET technology for microwave applications is not only limited to transistors but extended also to varactors. Therefore, there is a need for efficient and accurate varactor models in the high-frequency range. In this paper, an artificial neural networkbased behavioral model of varactors fabricated in advanced FinFET technology is proposed. The model is developed and verified by comparing measured and simulated scattering parameters up to 50 GHz. The extracted model can reproduce very well the measured behavior of the tested varactor before and after applying the de-embedding procedure based on open dummy structure.

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A Physically Based, Scalable MOS Varactor Model and Extraction Methodology for RF Applications

Cited by 38 publications

References 25 publications

Toward the Realization of a Programmable Metasurface Absorber Enabled by Custom Integrated Circuit Technology

Toward the Realization of a Programmable Metasurface Absorber Enabled by Custom Integrated Circuit Technology

Integrated-Circuit Enabled Adaptive Metasurface Absorber With Independent Tuning of Orthogonal Polarization Planes

Microwave neural modeling for silicon FinFET varactors

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