A Physically-Based Electron Mobility Model for Silicon Device Simulation

Kaiblinger-Grujin, G.; Selberherr, S.

doi:10.1007/978-3-7091-6827-1_78

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…The measured resistivity q was converted to carrier concentration n using n ¼ 1/eql with e the electron charge and l the electron mobility. The model of Kaiblinger-Grujin et al 21 was used to calculate the sulfur concentration-dependent mobility using the SIMS data to provide the atomic profiles.…”

Section: Methodsmentioning

confidence: 99%

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Umezu

Warrender

Charnvanichborikarn

et al. 2013

Journal of Applied Physics

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We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05-1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases. V C 2013 AIP Publishing LLC.

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Section: Methodsmentioning

confidence: 99%

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Umezu

Warrender

Charnvanichborikarn

et al. 2013

Journal of Applied Physics

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“…However, the minority carrier mobility for electrons can differ from the assumed majority carrier mobility; e.g., in silicon, the electrons minority carrier mobility in ptype silicon is higher than the majority carrier mobility in n-type silicon of the same doping level at high doping levels. [61,62] Furthermore, the mobility in the simulations is considered isotropic due to the missing possibility of combining an anisotropic mobility model with the galvanomagnetic transport model in Sentaurus Device. [63] However, in reality the mobility in 4H-SiC parallel to the c-axis, i.e., in vertical direction, is higher by ≈20% percent than the mobility perpendicular to the c-axis, [18] i.e., the lateral mobility.…”

Section: Calibration and Model's Validitymentioning

confidence: 99%

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes

Okeil,

Erlbacher,

Wachutka

2024

Adv Elect Materials

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In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation‐induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV‐characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

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“…This approach quantitatively predicts the main tendency of electrical characteristics of the examined devices. Formulation of mobility is an important factor for the strained Si devices [24][25], a strained-dependent mobility is implemented in our simulation. …”

Section: Device Structure and Simulationmentioning

confidence: 99%

Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors

Lee

Chou

2004

J Comput Electron

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In this paper we numerically examine the electrical characteristics of surrounding-gate strained silicon nanowire field effect transistors (FETs) by changing the radius (R SiGe ) of silicon-germanium (SiGe) wire. Due to the higher electron mobility, the n-type FETs with strained silicon channel films do enhance driving capability (∼8% increment on the drain current) in comparison with the pure Si one. The leakage current and transfer characteristics, the threshold-voltage (V t ), the drain induced barrier height lowering (DIBL), and the gate capacitance (C G ) are estimated with respect to different gate length (L G ), gate bias (V G ), and R SiGe . For short channel effects, such as V t roll-off and DIBL, the surrounding-gate strained silicon nanowire FET sustains similar characteristics with the pure Si one.

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A Physically-Based Electron Mobility Model for Silicon Device Simulation

Cited by 5 publications

References 2 publications

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes

Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors

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