2018 Design, Automation &Amp; Test in Europe Conference &Amp; Exhibition (DATE) 2018
DOI: 10.23919/date.2018.8342080
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A physical synthesis flow for early technology evaluation of silicon nanowire based reconfigurable FETs

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Cited by 27 publications
(10 citation statements)
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“…. Experiments using our physical synthesis flow show that SiNW RFETs based circuits for MCNC benchmarks occupy just 17.43% more area as compared to their CMOS counterparts [41]. Even thought the average area is more than CMOS baseline, the results are very encouraging considering the fact that in the used lab-technology, the individual RFETs are almost twice the size of CMOS.…”
Section: Area Resultsmentioning
confidence: 82%
See 1 more Smart Citation
“…. Experiments using our physical synthesis flow show that SiNW RFETs based circuits for MCNC benchmarks occupy just 17.43% more area as compared to their CMOS counterparts [41]. Even thought the average area is more than CMOS baseline, the results are very encouraging considering the fact that in the used lab-technology, the individual RFETs are almost twice the size of CMOS.…”
Section: Area Resultsmentioning
confidence: 82%
“…Recently, majority logic was proposed as the natural abstraction for newer nanotechnology and this forms the basis for new majority inverter graph (MIG) synthesis flow [3]. An area optimizing technology mapping flow exploiting functionally enhanced logic gates [56] was proposed in [41]. The authors incorporated inverter minimization to have more area savings specially designed for silicon nanowires FETsbased logic gates.…”
Section: Introductionmentioning
confidence: 99%
“…1D RFETs are more mature as compared to 2D devices due to their similarity to CMOS manufacturing process [52,53,54]. The stacked nanowire or nanosheet geometry is also considered as a successor to the FinFET geometry that is promoted to be used at lower technology nodes [55].…”
Section: A Reconfigurable Nanotechnologiesmentioning
confidence: 99%
“…At the logical abstraction, the runtime-reconfigurable properties offered by RFETs can be used to build logic gates with extended functionality [61,52,57,62,63]. These logic gates can be configured to deliver different logic functionalities on application of an external potential.…”
Section: B Polymorphic Logic Gates and Logic Lockingmentioning
confidence: 99%
“…In order to circumvent CMOS scaling and the various challenges that come with it, researchers have proposed many architectural modifications and system-level techniques which either focus on a single metric like area, power and delay or a particular combination of them. Many take a fresh perspective by involving emerging technologies like memristors [37,40,21], spintronics [65] and controllable-polarity transistors based on materials like silicon [30,31,64,66] and germanium [62] nanowires, carbon nanotubes [11] and 2D materials like WSe 2 [52]. Nikonov et al [48] demonstrate the promises of beyond-CMOS devices by benchmarking them and helping researchers seek methods of improving their power versus performance.…”
Section: Introductionmentioning
confidence: 99%