A physical model for the kink effect in InAlAs/InGaAs HEMTs

Somerville, Mark; Ernst, Alexander N.; Alamo, J.A. del

doi:10.1109/16.841222

Cited by 102 publications

(57 citation statements)

References 33 publications

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“…Depending on the device structure and layout, on the gate length and on the properties of epitaxial materials, the kink effect may occur at different drain voltage values V DSkink and may have a different bias dependence [1], light sensitivity [2], relationship with impact ionization [1], [3], dynamic behavior [3], and dependence on aging and surface treatments [4], [5]. Three explanations suggested for the kink effect have been clearly summarized in [2].…”

Section: Introductionmentioning

confidence: 99%

“…Three explanations suggested for the kink effect have been clearly summarized in [2]. These are the following: 1) channel impact ionization and subsequent hole accumulation leading to changes of surface or channel/substrate interface potential (as in silicon-on-insulator MOSFETs [1]); 2) field-dependent trapping/detrapping in deep levels; and 3) a combined effect of impact ionization and deep levels whereby generated holes modify the occupation state of surface, bulk, or channel/substrate interface deep levels [3]. Kink is a detrimental phenomenon for the performance of FETs, possibly resulting in output-conductance increase, transconductance compression, and dispersion between dc and RF characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Anomalous Kink Effect in GaN High Electron Mobility Transistors

Meneghesso

Zanon

Uren

et al. 2009

IEEE Electron Device Lett.

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An anomalous kink effect has been observed in the room-temperature drain current ID versus drain voltage VDS characteristics of GaN high electron mobility transistors. The kink is originated by a buildup (at low VDS) and subsequent release (at high VDS) of negative charge, resulting in a shift of pinch-off voltage VP toward more negative voltages and in a sudden increase in ID. The kink is characterized by extremely long negative charge buildup times and by a nonmonotonic behavior as a function of photon energy under illumination. The presence of traps in the GaN buffer may explain both spectrally resolved photostimulation data and the slow negative charge buildup

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Anomalous Kink Effect in GaN High Electron Mobility Transistors

Meneghesso

Zanon

Uren

et al. 2009

IEEE Electron Device Lett.

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“…[2][3][4][5][6][7][8][9][10] Despite their attractive characteristics for high-speed operation, the channels of such devices cause impact ionization, which generates holes. These holes accumulate at the extrinsic source, causing kink phenomena [11][12][13][14][15] and drain conductance frequency dispersion. [15][16][17] These phenomena lead to jitter which reduces the size of the eye-pattern opening of integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

NiAuGeAu ohmic contacts for a planar InP-based high electron mobility transistor structure with suppressed drain conductance frequency dispersion

Arai

Sawada

Hara

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have fabricated a thermally stable low-contact-resistance Ni/AuGe/Au contact metal for InP-based high electron mobility transistors (HEMTs) without a heavily doped cap layer. The contact resistance is strongly influenced by the amount of Ni. Minimum contact resistance of 0.19 Ω mm was obtained from a Ni (1 nm)/AuGe (50 nm)/Au (99 nm) contact annealed at 300 °C for 5 min in N2. A smooth surface was obtained after contact formation and excellent thermal stability was achieved during isothermal annealing at 350 °C for 1 h in a N2 ambient. This alloyed ohmic contact satisfies the requirements for device fabrication process steps after the ohmic contact formation. It prevents hole accumulation by eliminating the hole barrier at the carrier-supply layer/channel interface. It also suppresses the kink phenomena and drain conductance frequency dispersion of InP-based HEMTs, and therefore will greatly facilitate the fabrication of ultrahigh-speed integrated circuits.

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“…1 However they have still some drawbacks to be eliminated, like the kink effect (an anomalous increase in the drain current I D at sufficiently high drain-to-source voltages V DS ), which leads to a decrease in the gain and an enhancement in the noise level for high V DS , thus limiting their utility for microwave power applications. 2 When reducing the device dimensions to improve the operation frequency of HEMTs, very high electric fields appear in the gate-drain region of the channel, which, together with the narrow bandgap of InGaAs, makes this device very susceptible to impact ionization mechanisms. Some works suggest that impact ionization and the subsequent hole dynamics (jointly with trapping processes) can be responsible for the kink effect.…”

Section: Introductionmentioning

confidence: 99%

Kink-effect-related noise in InAlAs/InGaAs short-channel HEMTs

et al. 2003

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We study the kink effect and the subsequent noise enhancement in short-channel InAlAs/InGaAs high electron mobility transistors by means of Monte Carlo simulations. The origin of this effect and the associated increase of noise are explained in terms of microscopic quantities provided by the simulations. The results show that holes, generated by impact ionization at the drain side of the channel, tend to pile up under the source side of the gate due to the attracting potential caused by the surface charge at the recess and, mostly, by the gate potential. Due to this pile up of positive charge, the potential barrier controlling the current through the channel is lowered, so that the channel is further opened and the drain current increases. Impact ionization processes jointly with hole recombination lead to fluctuations of the positive charge in the channel, which are strongly coupled to the drain-current fluctuations by the high transconductance of the device. Thus the kink effect is found to originate an important increase in the noise of the drain current, with a characteristic cutoff frequency related to the impact ionization rate and the hole recombination time. Additionally, the holes reaching the gate electrode lead to the appearance of shot noise in the gate current.

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A physical model for the kink effect in InAlAs/InGaAs HEMTs

Cited by 102 publications

References 33 publications

Anomalous Kink Effect in GaN High Electron Mobility Transistors

Anomalous Kink Effect in GaN High Electron Mobility Transistors

NiAuGeAu ohmic contacts for a planar InP-based high electron mobility transistor structure with suppressed drain conductance frequency dispersion

Kink-effect-related noise in InAlAs/InGaAs short-channel HEMTs

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