A Physical Model for Bulk Gate Insulator Trap Generation During Bias-Temperature Stress in Differently Processed p-Channel FETs

Samadder, Tarun; Choudhury, Nilotpal; Kumar, Satyam; Kochar, Dimple; Parihar, Narendra; Mahapatra, S.

doi:10.1109/ted.2020.3045960

Cited by 21 publications

(1 citation statement)

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“…Additionally, interface traps resulting from defects at the nanosheet-shell interfaces are another source of variability. These traps can adversely affect device characteristics, including mobility degradation and threshold voltage instability [11][12][13] . Therefore, understanding the nature and impact of these D2D variabilities is imperative to improve the performance and reliability of advanced NSFETs.Notably, an alternative structural design for NSFET, that is, core-insulator-embedded NSFET (C-NSFETs), has been proposed recently 14 .…”

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confidence: 99%

Core-insulator embedded nanosheet field-effect transistor for suppressing device-to-device variations

Son,

Lee,

Kim

et al. 2024

Sci Rep

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Nanosheet field-effect transistors (NSFETs) have attracted considerable attention for their potential to achieve improved performance and energy efficiency compared to traditional FinFETs. Here, we present a comprehensive investigation of core-insulator-embedded nanosheet field-effect transistors (C-NSFETs), focusing on their improved performance and device-to-device (D2D) variability compared to conventional NSFETs through three-dimensional device simulations. The C-NSFETs exhibit enhanced direct-current (DC) performance, characterized by a steeper subthreshold slope and reduced off-current, indicating better gate electrostatic controllability. Furthermore, the structural design of C-NSFETs enables to demonstrate a notable resilience against D2D variations in nanosheet thickness and doping concentration. In addition, we investigate the effects of interface traps in C-NSFETs, emphasizing the importance of thermal oxidation processes in the formation of core-insulating layers to maintain optimal device performance.

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confidence: 99%