A physical GTO model for circuit simulation

Metzner, D.; Schröder, Dierk

doi:10.1109/ias.1992.244429

Cited by 13 publications

(5 citation statements)

References 2 publications

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“…In these low doped zones the ambipolar equation is solved like in device simulation programs by a segmentation of the zone which is time-and position-variant; so with a limited number of segmentations a result with high accuracy is achieved for the low doped zone. The high doped zones are approximated by more simple concentrated models [4], [5]. Due to this approach these physical models cover a very wide range of operating points and applications.…”

Section: The Physical Models For Power Semiconductorsmentioning

confidence: 99%

State-of-the-art verification of the hard-driven GTO inverter development for a 100-MVA intertie

Steimer

Gruning

Werninger

et al. 1998

IEEE Trans. Power Electron.

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The 100 MVA intertie is mainly characterised by the following innovations: − hard driven GTO (HD-GTO) with a new housing − series connection of hard driven GTOs − low-inductive high power HD-GTO inverter valve − fuseless high power HD-GTO inverter. The presented hard driven GTO technology allows the robust, reliable and cost-efficient series connection of GTOs. The concept of the 100 MVA intertie, which is based on the HD-GTO technology, is reviewed. The development of the high power HD-GTO inverter module according to a state-of-the-art development process is presented. With the use of a circuit simulator with accurate physical models of the power semiconductors, especially the concept phase, the development phase and the verification phase have been supported.

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Section: The Physical Models For Power Semiconductorsmentioning

confidence: 99%

State-of-the-art verification of the hard-driven GTO inverter development for a 100-MVA intertie

Steimer

Gruning

Werninger

et al. 1998

IEEE Trans. Power Electron.

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“…Only when the impact ionisation effect is included, the switching characteristics, especially the thermal performance and overvoltage during turning off can be predicted correctly. Moreover, the moving boundary of the buffer region due to punch-through (PT) effect in high-power IGCTs has neither been properly reported nor well considered in the existing literature [13][14][15][16]. Reported approaches of PT effect in existing IGBT models, however, have the buffer region modelled as a lumped-charge region with fixed boundary [16], which is not physically correct during PT.…”

Section: Introductionmentioning

confidence: 99%

Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application

Lyu

Zhuang

Li³

et al. 2018

IET Power Electronics

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This paper presents a physics-based compact model of integrated gate-commutated thyristor (IGCT) with multiple effects for high power application. The proposed model has both acceptable accuracy and computation time requirement, which is suitable for system level circuit simulation and IGCT's whole wafer modelling work. First, the development of IGCT model is discussed and the one-dimension phenomenon of IGCT is analyzed in the paper. Second, a physics-based compact model of IGCT is proposed. The proposed model of IGCT includes multiple physical effects that are crucial to IGCTs working in high power applications. These physical effects include the impact ionization effect, moving boundary of depletion region during punch-thourgh (PT) and the local lifetime region. The Fourier series solution is applied for the ambipolar diffusion equation in the base region. Third, the proposed model is implemented in Simulink and compared with the model in Silvaco Atlas, a finite-element (FEM) tool. Finally, the proposed compact model of IGCT is validated by experiments. Keywords-physics-based compact model, local lifetime region, gate commutated thyristors, punch through, power semiconductor modeling NOMENCLATURE A Total active area. (cm 2) q Electric charge (J) Si Dielectric constant for silicon. (F/cm 2) k Boltzmann's constant. (J/K) T Absolute temperature. (K) Vt=kT/q Thermal Voltage. (V) n0 Electron mobility. (cm 2 /Vs) p0 Hole mobility. (cm 2 /Vs) D Ambipoar diffusivity. (cm 2 /s) Dn Electron diffusivity. (cm 2 /s) Dp Hole diffusivity. (cm 2 /s) h Recombination parameter. (cm 2) J Current density. (A/cm 2) In1,Ip1 Electron and hole current at x1 edge of undepleted drift region. (A) In2,Ip2 Electron and hole current at x2 edge of undepleted drift region. (A) IA Total anode current. (A) IC Total cathode current. (A) IG Total gate current. (A) NB N-base region doping concentration. (cm-3) NPb P-base region doping concentration. (cm-3) NNb N-base region doping concentration. (cm-3) ni Intrinsic carrier concentration. (cm-3) n Electron carrier concentration. (cm-3) p Hole carrier concentration. (cm-3) px1 Hole carrier density at x1. (cm-3) px2 Hole carrier density at x2. (cm-3) t Time. (s) HL High-level lifetime. (s) LL Low-level lifetime. (s) Vd Voltage across depletion region. (V) W Thickness of stored charge region. (cm) WB Thickness of N-base region. (cm) WN+ Thickness of N-base region. (cm) WPb Thickness of P-base region. (cm) WNb Thickness of N-buffer region. (cm) IET Review Copy Only IET Power Electronics This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication in an issue of the journal. To cite the paper please use the doi provided on the Digital Library page.

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“…During recent years, much effort has been expended on constructing proper GTO models for simulation and analysis. Many of the GTO models are derived from the GTO device structure, being 1 dimension (l-D), 2 dimensions (2-D) or partly 2-D models [1][2][3]. A set of the partial derivative equations or the finite element method must be used.…”

Section: Introductionmentioning

confidence: 99%

A complete composite GTO model for circuit simulations

Qian

et al. 1998

J. of Electron.(China)

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The paper presents a complete composite gate turn-off thyristor (GTO) model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the complete composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device. In particular, the GTO gate dynamical characteristics in practical circuits are discussed and experimental results are included.

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A physical GTO model for circuit simulation

Cited by 13 publications

References 2 publications

State-of-the-art verification of the hard-driven GTO inverter development for a 100-MVA intertie

State-of-the-art verification of the hard-driven GTO inverter development for a 100-MVA intertie

Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application

A complete composite GTO model for circuit simulations

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