A physical approach on SCOBIC investigation in VLSI

Beauchene, T.; Lewis, Dean; Beaudoin, Félix; Pouget, Vincent; Perdu, Philippe; Fouillat, P.; Danto, Yves

doi:10.1016/s0026-2714(02)00282-2

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…Several techniques have been developed to localize electrical failures in LSI circuits, such as thermal or infrared emission analysis, laser testing techniques, emission microscopy, and electron beam testing. In particular, laser-testing techniques, such as the infrared-optical beam induced resistance change [4] and optical beam induced current (OBIC) [5], offer alternatives for non-contact, non-destructive failure analysis.…”

Section: Introductionmentioning

confidence: 99%

Imaging of large-scale integrated circuits using laser-terahertz emission microscopy

Yamashita¹,

Kawase²,

Otani³

et al. 2005

Opt. Express

130

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We present the redesign and improved performance of the laser terahertz emission microscope (LTEM), which is a potential tool for locating electrical failures in integrated circuits. The LTEM produces an image of the THz waves emitted when the circuit is irradiated by a femtosecond laser; the amplitude of the THz emission is proportional to the local electric field. By redesigning the optical setup and improving the spatial resolution of the system to below 3 microm, we could extend its application to examining of large-scale integration circuits. As example we show the THz emission pattern of the electric field in an 8-bit microprocessor chip under bias voltage.

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Section: Introductionmentioning

confidence: 99%

Imaging of large-scale integrated circuits using laser-terahertz emission microscopy

Yamashita¹,

Kawase²,

Otani³

et al. 2005

Opt. Express

130

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show abstract

“…Several methods for realizing a noncontact IC probe have been proposed. [1][2][3] One method is to detect the electromagnetic radiation in the terahertz range emitted when a femtosecond pulsed laser is applied to the semiconductor. 4) Another method is to measure the electric field close to the IC surface using a crystal whose index of refraction depends on the field.…”

mentioning

confidence: 99%

Detection of Femtometer Deformations of Semiconductor Devices in Operation Using an Optical Lever

Mitsui

2008

jjap

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The operation of an integrated circuit (IC) should cause the thermal expansion of individual semiconductor devices fabricated on the IC. However, the thermal expansion has never been detected due to its smallness. We succeeded in detecting the thermal expansion by using an optical lever and found that its size was 10 À13 m. This technology is suitable for uses an optical IC probe and is a new method for the study of nanodevices.

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“…The inspection and failure analysis of semiconductor devices has become a critical issue as there is an increasing demand for quality and reliability in circuits [1][2][3][4]. In the field of LSI failure analysis, techniques such as emission microscopy, infrared optical beam induced resistance change (IR-OBIRCH) and electron beam testing are used to localize the electrical failure spot nondestructively.…”

mentioning

confidence: 99%

Backside observation of semiconductor devices using a laser THz emission microscope

Yamashita¹,

Nikawa²,

Tonouchi³

et al. 2005

International Quantum Electronics Conference, 2005.

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We developed an infrared laser terahertz emission microscope (IR-LTEM) using 1 µm wavelength fs laser pulses for inspecting electrical failures in large scale integration (LSI) chips from the backside. We succeeded in obtaining the LTEM image of a MOSFET sample from the backside of the chip under zero bias condition. The backside observation of the LSI chip is indispensable because most LSI chips have a multi-layered interconnection structure and their surface is mostly covered with metal interconnects, hindering the observation from the front surface.

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A physical approach on SCOBIC investigation in VLSI

Cited by 7 publications

References 6 publications

Imaging of large-scale integrated circuits using laser-terahertz emission microscopy

Imaging of large-scale integrated circuits using laser-terahertz emission microscopy

Detection of Femtometer Deformations of Semiconductor Devices in Operation Using an Optical Lever

Backside observation of semiconductor devices using a laser THz emission microscope

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