A phenomenological approach to the anisotropic magnetoresistance and planar Hall effect in tetragonal La2/3Ca1/3MnO3thin films

Li, J; Li, S L; Wu, Z. W.; Chu, Hao; Wang, Jinlan; Zhang, Y; Tian, Huanfang; Zheng, Dewen

doi:10.1088/0953-8984/22/14/146006

Cited by 29 publications

(31 citation statements)

References 31 publications

(62 reference statements)

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“…The AMR data show a clear two-fold oscillation. A phenomenological model is commonly used to describe the AMR and PHE values in typical 3d ferromagnetic systems [27][28][29] . In this model, the resistivity tensor is defined in terms of the direction of current with respect to the applied magnetic field.…”

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confidence: 99%

Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures

Narayanapillai

Gopinadhan

Qiu

et al. 2014

Applied Physics Letters

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We demonstrate a current tunable Rashba spin orbit interaction in LaAlO 3 /SrTiO 3 (LAO/STO) quasi two dimensional electron gas (2DEG) system. Anisotropic magnetoresistance (AMR) measurements are employed to detect and understand the current-induced Rashba field. The effective Rashba field scales with the current and a value of 2.35 T is observed for a dc-current of 200 µA. The results suggest that LAO/STO heterostructures can be considered for spin orbit torque based magnetization switching. a)

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confidence: 99%

Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures

Narayanapillai

Gopinadhan

Qiu

et al. 2014

Applied Physics Letters

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“…Although AMR has been known since Thomson's-later known as Lord Kelvin-observations in 1856 [6], PHE was discovered only a century later in polycrystalline permalloy [7]. More recently, PHE has also been found in crystalline La 2=3 Fe 1=3 MnO 3 [8] and as a very large effect at low temperatures in the dilute magnetic semiconductor (Ga,Mn)As [9]. The transverse resistance xy characterizing the PHE and the longitudinal resistivity xx denoting the AMR are given by [10] xy ¼ ð k À ?…”

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confidence: 99%

Origin of the Planar Hall Effect in NanocrystallineCo60Fe20B20

et al. 2011

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An angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co 60 Fe 20 B 20 thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co 60 Fe 20 B 20 obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at. % boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. Furthermore, we experimentally demonstrate that the anomalous Hall effect contributes negligibly in the present case. DOI: 10.1103/PhysRevLett.107.086603 PACS numbers: 72.25.Ba, 71.70.Ej, 72.15.Gd Electron transport effects employing the electronic spin degree of freedom lie at the heart of spintronics and its applications not only in information technology [1] but more increasingly also in sensorics for biomedical purposes, where the utmost sensitivity for detecting minute magnetic stray fields is needed. The planar Hall effect (PHE) and the anomalous Hall effect (AHE) as well as tunneling magnetoresistance are promising phenomena for realizing highly sensitive sensors. From a materials point of view, nanocrystalline Co 60 Fe 20 B 20 (CoFeB) attracts growing attention since it combines large saturation magnetization with low coercivity [2,3], both favoring high sensitivities.PHE and AHE are both observed as a voltage transverse to the applied current [4,5] in contrast to the anisotropic magnetoresistance (AMR), which is measured in the longitudinal geometry. For PHE the magnetization M lies in the plane spanned by the current density j ¼ je x and the direction e y of the transverse voltage measurement, and for AHE the component of M perpendicular to j and e y matters. Although AMR has been known since Thomson's-later known as Lord Kelvin-observations in 1856 [6], PHE was discovered only a century later in polycrystalline permalloy [7]. More recently, PHE has also been found in crystalline La 2=3 Fe 1=3 MnO 3 [8] and as a very large effect at low temperatures in the dilute magnetic semiconductor (Ga,Mn)As [9]. The transverse resistance xy characterizing the PHE and the longitudinal resistivity xx denoting the AMR are given by [10] xy ¼ ð k À ? Þ sinÈ cosÈwhere k ( ? ) is the resistivity along (perpendicular to) the direction of the in-plane component of M, and È is the angle enclosed by j and M. A transverse voltage arises whenever the current is neither perpendicular nor parallel to the magnetization. Even though the AMR is a subtle spin-orbit effect, quantitatively reliable predictions from first principles based on the density functional theory (DFT) can be made [11,12]. In this Letter, we elucidate the role of AMR in the PHE in nanocrystalline Co 60 Fe 20 B 20 thin films experimentally and by ab initio calculations. We measure AMR and PHE in longitudinal and transverse four-probe transport experiments. The single-domain behavior enforced by an ...

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“…17. Since the C t r 2 exists in the tetragonal system but does not in the cubic one, we can distinguish between cubic and tetragonal systems by measuring the transverse AMR effect.…”

Section: Transverse Amr Effectmentioning

confidence: 99%

Transverse anisotropic magnetoresistance effects in pseudo-single-crystal γ′-Fe4N thin films

2016

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Transverse anisotropic magnetoresistance (AMR) effects, for which magnetization is rotated in an orthogonal plane to the current direction, were investigated at various temperatures, in order to clarify the structural transformation from a cubic to a tetragonal symmetry in a pseudo-single-crystal Fe4N film, which is predicted from the usual in-plane AMR measurements by the theory taking into account the spin-orbit interaction and crystal field splitting of 3d bands. According to a phenomenological theory of AMR, which derives only from the crystal symmetry, a cos 2θ component (C2tr) exists in transverse AMR curves for a tetragonal system but does not for a cubic system. In the Fe4N film, the C2tr shows a positive small value (0.12%) from 300 K to 50 K. However, the C2tr increases to negative value below 50 K and reaches to -2% at 5 K. The drastic increasing of the C2tr demonstrates the structural transformation from a cubic to a tetragonal symmetry below 50 K in the Fe4N film. In addition, the out-of-plane and in-plane lattice constants (c and a) were precisely determined with X-ray diffraction at room temperature using the Nelson-Riely function. As a result, the positive small C2tr above 50 K is attributed to a slightly distorted Fe4N lattice (c/a = 1.002).

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A phenomenological approach to the anisotropic magnetoresistance and planar Hall effect in tetragonal La_2/3Ca_1/3MnO₃thin films

Cited by 29 publications

References 31 publications

Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures

Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures

Origin of the Planar Hall Effect in NanocrystallineCo60Fe20B20

Transverse anisotropic magnetoresistance effects in pseudo-single-crystal γ′-Fe4N thin films

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