A PHEMT based wideband LNA for wireless applications

Khan, Muhammad Saad; He, Pengfei; Shahzad, Sulman; Ullah, Rahat

doi:10.1109/cc.2015.7315062

Cited by 8 publications

(3 citation statements)

References 13 publications

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“…Applications include mobile infrastructure, cable television (CATV), radar, satellite communication, point to point, and general-purpose wireless. In addition, with the recent evolution of communication systems such as 5 G (Sub-6 GHz) and Wi-Fi 6/6E, a broadband gain amplifier including additional frequency bands is strongly required [1,2]. For bands from the near DC to the 5 GHz band, gain amplifiers using various techniques have been reported [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, with the recent evolution of communication systems such as 5 G (Sub-6 GHz) and Wi-Fi 6/6E, a broadband gain amplifier including additional frequency bands is strongly required [1,2]. For bands from the near DC to the 5 GHz band, gain amplifiers using various techniques have been reported [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. However, it is not easy to keep the S 21 flatness for a wide frequency band due to the difficulty to realize the matching circuit for varying impedance over frequency.…”

Section: Introductionmentioning

confidence: 99%

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A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process

Kim

Jhon

2021

Electronics

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This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. To ensure the robustness of the design, the amplifier had to consider the effects of the Electrostatic Discharge (ESD)-protected diode and the package, which can degrade the broadband performance. Therefore, the equivalent circuit models of the package and the ESD-protected diode were analyzed and simulated in this paper. The designed broadband gain amplifier from 50 MHz to 5 GHz frequency band has a die size of 700 μm × 1000 μm and consumes 156 mW of dc power, and it was simulated with a gain of 18.7 dB to 20.6 dB, a P1dB of 15.3 to 16.9 dBm, and a OIP3 of 26.5 to 31 dBm. Furthermore, the excellent gain flatness exhibited within 18.7 dB ± 1.92 dB at the interest of the frequency band.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process

Kim

Jhon

2021

Electronics

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“…Normally, GaAs based devices are appropriate for defence, military, commercial applications including radar and automotive technologies in the frequency range up to several GHz. GaAs pHEMT (Arsalan et al , 2014; Eshghabadi et al , 2013; Khan et al , 2015; Siddiqui, 2005; Sze, 2006) transistor built using a heterojunction. It has an n+ AlGaAs layer and a very thin undoped InGaAs layer beneath it.…”

Section: Introductionmentioning

confidence: 99%

An ultra-low noise pseudomorphic high electron mobility transistor (pHEMT)-based low noise amplifier using low temperature co-fire ceramic (LTCC) technique

Subburaman¹,

Sundharajan²

2021

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Purpose This study aims to present two stage pseudomorphic high electron mobility transistor-based low noise amplifier (LNA) designed using low temperature co-fire ceramic (LTCC) technique for ultra-high frequency (UHF) band. The LNA operates in the frequency range of (400∼500) MHz which is suitable for wireless communication applications. Design/methodology/approach This LNA uses resistive capacitive (RC) feedback in the first stage to have wide bandwidth and interstage network for gain enhancement. By using external RC feedback, stability is improved and noise matching in the input stage is isolated by decoupling inductor. The excellent performance parameters including gain, noise figure (NF), wideband and linearity are attained without affecting the power consumption, compactness and cost of the proposed design. Findings Simulation is carried out using advanced design software and the result shows that gain of 33.7 dB, NF 0.416 dB and 1 dB compression point (P1dB) of 18.59 dBm are achieved with a supply voltage of 2.5 V. The return loss of input and output are −19.3 dB and −10.5 dB, respectively. From the above aforementioned parameters, it is confirmed that the proposed LNA is a promising candidate for receivers where high gain and very low NF are always demandable with good linearity for applications operating in the UHF band. Originality/value The innovation of the proposed LNA is that the concurrent attainment of high gain, low NF, wideband, optimum input matching, good stability by RC feedback and interstage network using LTCC technique to achieve robustness, low cost and compactness to prove the applicability of design for wireless applications.

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Charting the UK's path to net zero emissions by 2050: Challenges, strategies, and future directions

Shahzad,

Faheem,

Muqeet

et al. 2024

IET Smart Grid

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The authors explore the various obstacles and possible approaches that the UK may take to fulfil its goal of having net‐zero greenhouse gas emissions by 2050. The paper thoroughly examines several aspects of this project, such as the modernisation of infrastructure, the energy transition, the economic effects, the obstacles to research and development, changes in behaviour, and the frameworks for policy and regulation. With a 44% decrease from 1990 levels by 2021, it showcases the UK's noteworthy achievement in lowering emissions and its ambitious initiatives, such as the £12 billion Ten Point Plan, to accelerate this development. The difficulties of switching from reliance on fossil fuels to renewable energy sources, their implications for the economy, and the necessity of green technology innovation are all covered in the article. It also discusses the behavioural sides of this shift, highlighting the need to change one's lifestyle and engage the public. To address these issues, the importance of international cooperation and policymaking is emphasised. Insights into potential remedies are provided by the article, which includes energy efficiency initiatives, investments in renewable energy, assistance for clean technology R&D, green funding options, public awareness campaigns, international cooperation, and regulatory frameworks. Every one of these alternatives is examined for possible effects and obstacles. The article concludes that reaching net zero in the UK is a complex but necessary objective that calls for a concerted strategy that strikes a balance between social and economic concerns and environmental sustainability.

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A PHEMT based wideband LNA for wireless applications

Cited by 8 publications

References 13 publications

A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process

A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process

An ultra-low noise pseudomorphic high electron mobility transistor (pHEMT)-based low noise amplifier using low temperature co-fire ceramic (LTCC) technique

Charting the UK's path to net zero emissions by 2050: Challenges, strategies, and future directions

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