A phase-field approach to studying the temperature-dependent ferroelectric response of bulk polycrystalline PZT

Indergand, Roman; Vidyasagar, A.; Nadkarni, Neel; Kochmann, Dennis M.

doi:10.1016/j.jmps.2020.104098

Cited by 30 publications

(9 citation statements)

References 77 publications

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“…The thermal noise-induced dipole fluctuations in the FE system could be characterized through a statistical mechanics 14) approach to capture the influence of the lattice vibrations in the time-dependent Landau-Ginzburg equations (TDLG), changing the equations into the stochastic form [Eq. (1)].…”

Section: Phase-field Model Of the Stochastic Multidomain Fe Systemmentioning

confidence: 99%

“…To reduce the hardware cost, other p-bit designs rely on various physical phenomena with inherent stochasticity, such as those based on magnetic tunnel junction 4,11) and diffusive memristor. 12) In the previous works we propose a design of p-bits based on stochastic ferroelectric FET (FeFET), 13) relying on dipole fluctuation originated from the thermal noise-induced lattice vibration, [14][15][16][17] with mechanisms summarized in Fig. 1(a).…”

Section: Introductionmentioning

confidence: 99%

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The stochastic ferroelectric field-effect transistors-based probabilistic-bits: from device physics analysis to invertible logic applications

Luo,

He,

Fang

et al. 2024

Jpn. J. Appl. Phys.

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A probabilistic-bit (p-bit) is the fundamental building block in the circuit network of probabilistic computing (PC), producing a continuous random bitstream with tunable probability. Among the various p-bit designs, the recently proposed ferroelectric FET (FeFET)-based p-bit is found to possess the advantages of both ultralow hardware cost and CMOS compatibility. In this work, we perform a comprehensive analysis of the stochasticity in ferroelectric material, revealing the mechanisms of domain dynamics and temperature on FE stochasticity. The device-to-device variations of several device/material parameters are then evaluated, affecting the probabilistic-curves to different extents. Furthermore, the integer factorization is performed based on the invertible logic circuits comprising of FE p-bits, aiming to verify its functionality. The accuracy of integer factorization is found to highly depend on FE p-bits’ stochasticity, and various methods have been implemented to optimize its performance, providing unique insights for the future large-scale PC applications.

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Section: Phase-field Model Of the Stochastic Multidomain Fe Systemmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The stochastic ferroelectric field-effect transistors-based probabilistic-bits: from device physics analysis to invertible logic applications

Luo,

He,

Fang

et al. 2024

Jpn. J. Appl. Phys.

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“…The latter arise in ferroelectrics quenched below the Curie temperature, as a consequence of the paraelectricferroelectric transition (Nambu and Sagala, 1994;Ahluwalia and Cao, 2001;Yang and Chen, 1995;Chen, 1997, 1998;Li et al, 2001). Afterwards, works in the the mechanics literature dealt with the coupling of the TDGL equations-which were re-derived from variational principles (Zhang and Bhattacharya, 2005a) or microforce balance (Su and Landis, 2007)-with electrostatic Gauss' law and the mechanical balance equations to simulate the evolution of ferroelectric domain patterns in response to an applied electric field, i.e., polarization switching (Zhang and Bhattacharya, 2005a,b;Su and Landis, 2007;Vidyasagar et al, 2017;Indergand et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

A phase-field model for ferroelectrics with general kinetics. Part I: Model formulation

Guin¹,

Kochmann²

2022

Preprint

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When subjected to electro-mechanical loading, ferroelectrics see their polarization evolve through the nucleation and evolution of domains. Existing mesoscale phase-field models for ferroelectrics are typically based on a gradient-descent law for the evolution of the order parameter. While this implicitly assumes that domain walls evolve with linear kinetics, experiments instead indicate that domain wall kinetics is nonlinear. This, in turn, is an important feature for the modeling of rate-dependent effects in polarization switching. We propose a new multiple-phase-field model for ferroelectrics, which permits domain wall motion with nonlinear kinetics, with applications in other solid-solid phase transformation problems. By means of analytical traveling-wave solutions, we characterize the interfacial properties (energy and width) and the interface kinetics of straight domain walls, as furnished by the general kinetics model, and compare them to those of the classical Allen-Cahn model. We show that the proposed model propagates domain walls with arbitrarily chosen nonlinear kinetic relations, which can be tuned to differ for the different types of domain walls in accordance with experimental evidence. In a companion paper, we implement numerically the general kinetics model and characterize the evolution of curved walls and junction points for multiple phases.

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“…1(d)]. Several prior works also reported on LGD modeling in the presence of noise [11][12][13]. Although computationally demanding, one of the primary motivations for including noise explicitly is the ability to model finite-temperature effects accurately.…”

Section: Introductionmentioning

confidence: 99%

Structures and velocities of noisy ferroelectric domain walls

Basun¹,

Neumayer²,

Maksymovych³

et al. 2022

Preprint

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Ferroelectric domain wall motion is fundamental to the switching properties of ferroelectric devices and is influenced by a wide range of factors including spatial disorder within the material and thermal noise. We build a Landau-Ginzburg-Devonshire (LGD) model of 180 • ferroelectric domain wall motion that explicitly takes into account the presence of both spatial and temporal disorder. We demonstrate both creep flow and linear flow regimes of the domain wall dynamics by solving the LGD equations in a Galilean frame moving with the wall velocity v. Thermal noise plays a key role in the wall depinning process at small fields E. We study the scaling of the velocity v with the applied DC electric field E and show that noise strongly affects domain wall velocities. We also show that the domain wall widens significantly in the presence of thermal noise, especially as the material temperature T approaches the critical temperature Tc. These calculations therefore point to the potential of noise and disorder to become control factors for the switching properties of ferroelectric materials, for example for advancement of microelectronic applications.

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A phase-field approach to studying the temperature-dependent ferroelectric response of bulk polycrystalline PZT

Cited by 30 publications

References 77 publications

The stochastic ferroelectric field-effect transistors-based probabilistic-bits: from device physics analysis to invertible logic applications

The stochastic ferroelectric field-effect transistors-based probabilistic-bits: from device physics analysis to invertible logic applications

A phase-field model for ferroelectrics with general kinetics. Part I: Model formulation

Structures and velocities of noisy ferroelectric domain walls

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