A pertinent approximation of the electrostatic potential in a quantized electron accumulation layer induced at a nonideal surface of a narrow‐gap semiconductor
Abstract:Quantitative analysis of the electron accumulation layer formed near nonideal (actual) semiconductor surface causes considerable difficulties. In the present article, for the accumulation layers induced in the subsurface region at the real narrow‐gap semiconductor‐insulator interface, an effective algorithmic approach providing a simplified self‐consistent solution of the Poisson and Schrödinger equations is proposed and discussed. The physical model takes into account the conduction band nonparabolicity, elec… Show more
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