A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Abstract

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1−xN, x is the Al composition), β-phase gallium oxide (β-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1−xN and β-Ga2O3. This Perspective delineates the need and process for the “electro-thermal co-design” of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs

“…However, device overheating has become one of the most critical bottlenecks to the commercialization of Ga 2 O 3 device technologies . In fact, no Ga 2 O 3 device reported to date has achieved the performance expected by the outstanding electronic properties because a thermally limited technological plateau has been reached.…”

“…However, device overheating has become one of the most critical bottlenecks to the commercialization of Ga 2 O 3 device technologies. 5 In fact, no Ga 2 O 3 device reported to date has achieved the performance expected by the outstanding electronic properties because a thermally limited technological plateau has been reached. Ga 2 O 3 possesses a poor anisotropic thermal conductivity (11−27 W/mK), 6,7 which is an order of magnitude lower than those for GaN (∼150 W/mK) 8,9 and SiC (∼400 W/mK).…”

Luminescence Thermometry Beyond the Biological Realm

“…While luminescence thermometry has both longstanding ties to and continued promise for biological applications, this applications-driven review has highlighted an extensive body work from the last several decades that demonstrates how luminescence thermometry can address challenges in many other areas. Identifying micro to nanoscale hotspots in electronics, an early device-oriented application of luminescence thermometry, remains a frontier opportunity, with increasingly important technologies such as wide bandgap devices presenting a new set of thermal challenges and metrology needs. , Devices for quantum computing applications, many of which operate well below room temperature, similarly benefit from thermal characterization and are a prime example of applications that could take advantage of the wide operating temperature range of luminescent thermometers. Various applications in catalysis have appeared in recent years, indicating opportunities to optimize reactor conditions, delineate photothermal and photochemical mechanisms, and characterize the temperature rise resulting from heat generated by exothermic reactions.…”

Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices

“…5,6 One major roadblock to realizing the full potential of GaN in both geometries is device operating temperature. 7 GaN power devices can exceed temperatures of 300 °C under operating conditions, reducing the electron mobility and, thus, device efficiency. 8 In an effort to reduce operating temperatures in lateral devices, heat wicking substrates and coatings have been used, 9−13 along with active liquid cooling methods.…”