A performance optimization and analysis of graphene based schottky barrier GaAs solar cell

Singh, Khomdram Jolson; Chettri, Dhanu; Singh, Thokchom Jayenta; Thingujam, Terirama; Sarkar, Subir Kumar

doi:10.1088/1757-899x/211/1/012024

Cited by 6 publications

(2 citation statements)

References 11 publications

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“…In order to mimic the global terrestrial sunshine, the modelled device was illuminated with AM1.5G solar spectrum, which is taken into account by LUMINIOUS 3D for modelling sunlight in SILVACO Atlas [ 24 ]. The light could be absorbed in the barrier layer and inside the semiconductor.…”

Section: Resultsmentioning

confidence: 99%

Development and Analysis of Graphene-Sheet-Based GaAs Schottky Solar Cell for Enriched Efficiency

et al. 2023

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Comparative studies of the 2D numerical modelling and simulation of graphene-based gallium arsenide and silicon Schottky junction solar cell are studied using TCAD tools. The performance of photovoltaic cells was examined while taking parameters, such as substrate thickness, relationship between transmittance and work function of graphene, and n-type doing concentration of substrate semiconduction. The area with the highest efficiency for photogenerated carriers was found to be located near the interface region under light illumination. The significant enhancement of power conversion efficiency was shown in the cell with a thicker carrier absorption Si substrate layer, larger graphene work function, and average doping in a silicon substrate. Thus, for improved cell structure, the maximum JSC = 4.7 mA/cm2, VOC = 0.19 V, and fill factor = 59.73% are found under AM1.5G, exhibiting maximum efficiency of 6.5% (1 sun). The EQE of the cell is well above 60%. This work reports the influence of different substrate thickness, work function, and N-type doping on the efficiency and characteristics of graphene-based Schottky solar cells.

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Section: Resultsmentioning

confidence: 99%

Development and Analysis of Graphene-Sheet-Based GaAs Schottky Solar Cell for Enriched Efficiency

et al. 2023

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“…where χ GaAs is the electron affinity of GaAs, Φ Graphene is the work function of graphene, and Δ g is the shift of the Fermi level of graphene caused by the electron diffusion [24,31]. The flowing direction of electrons is assumed as from graphene to semiconductor, which involves the tunneling process.…”

Section: Resultsmentioning

confidence: 99%

Graphene/Semiconductor Heterostructure Wireless Energy Harvester through Hot Electron Excitation

Xuan

Chen

et al. 2020

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Recharging the batteries by wireless energy facilitates the long-term running of the batteries, which will save numerous works of battery maintenance and replacement. Thus, harvesting energy form radio frequency (RF) waves has become the most promising solution for providing the micropower needed for wireless sensor applications, especially in a widely distributed 4G/5G wireless network. However, the current research on rectenna is mainly focused on the integrated antenna coupled with metal-insulator-metal tunneling diodes. Herein, by adopting the plasmon excitation of graphene and quantum tunneling process between graphene and GaAs or GaN, we demonstrated the feasibility of harvesting energy from the 915 MHz wireless source belonging to 5G in the FR1 range (450 MHz–6 GHz) which is also known as sub-6G. The generated current and voltage can be observed continuously, with the direction defined by the built-in field between graphene and GaAs and the incident electromagnetic waves treated as the quantum energy source. Under the RF illumination, the generated current increases rapidly and the value can reach in the order of 10-8–10-7 A. The harvester can work under the multiple channel mode, harvesting energy simultaneously from different flows of wireless energy in the air. This research will open a new avenue for wireless harvesting by using the ultrafast process of quantum tunneling and unique physical properties of graphene.

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Estimation and analysis for modelling of stand-alone graphene/AlGaAs/GaAs schottky solar photovoltaic cell module for power conversion efficiency

et al. 2021

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A performance optimization and analysis of graphene based schottky barrier GaAs solar cell

Cited by 6 publications

References 11 publications

Development and Analysis of Graphene-Sheet-Based GaAs Schottky Solar Cell for Enriched Efficiency

Development and Analysis of Graphene-Sheet-Based GaAs Schottky Solar Cell for Enriched Efficiency

Graphene/Semiconductor Heterostructure Wireless Energy Harvester through Hot Electron Excitation

Estimation and analysis for modelling of stand-alone graphene/AlGaAs/GaAs schottky solar photovoltaic cell module for power conversion efficiency

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