A peeling algorithm for extraction of the HBT small-signal equivalent circuit

Sheinman, B.; Wasige, Edward; Rudolph, Matthias; Doerner, Ralf; Sidorov, V.; Cohen, Shimon; Ritter, D.

doi:10.1109/tmtt.2002.805195

Cited by 52 publications

(27 citation statements)

References 18 publications

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“…Compared to the standard topology, a more detailed intrinsic Tmodel equivalent circuit is used (i.e., adding C bcon , r bc , r ci ) to highlight the distribute nature of the base [38], HBT circuit no. 4: topology applied to on-wafer InP/GaInAs HBTs designed for the millimeter-wave range [39]. In this topology, C pcei , R bc , and C pbc are added, while removing C bcp , to simplify the intrinsic equivalent-circuit parameter extraction [39], HBT circuit no.…”

Section: A Transistor Equivalent Circuit Librarymentioning

confidence: 99%

“…4: topology applied to on-wafer InP/GaInAs HBTs designed for the millimeter-wave range [39]. In this topology, C pcei , R bc , and C pbc are added, while removing C bcp , to simplify the intrinsic equivalent-circuit parameter extraction [39], HBT circuit no. 5: topology applied to Si/SiGe HBTs [40].…”

Section: A Transistor Equivalent Circuit Librarymentioning

confidence: 99%

“…The third device to be modeled is a 1 3 10 InP/ GaInAs HBT proposed in [39] using HBT topology no. 4.…”

Section: Example 3: Hbtmentioning

confidence: 99%

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Fuzzy neural-based approaches for efficient RF/microwave transistor modeling

Gaoua

Cheng

et al. 2009

Int J RF and Microwave Comp Aid Eng

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In today's RF and microwave circuits, there is an ever-increasing demand for higher level of system integration that leads to massive computational tasks during simulation, optimization, and statistical analyses, requiring efficient modeling methods so that the whole process can be achieved reliably. Since active devices such as transistors are the core of modern RF/microwave systems, the way they are modeled in terms of accuracy and flexibility will critically influence the system design, and thus, the overall system performance. In this article, the authors present neural-and fuzzy neural-based computer-aided design techniques that can efficiently characterize and model RF/microwave transistors such as field-effect transistors and heterojunction bipolar transistors. The proposed techniques based on multilayer perceptrons neural networks and c-means clustering algorithms are demonstrated through examples.

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Section: A Transistor Equivalent Circuit Librarymentioning

confidence: 99%

Section: A Transistor Equivalent Circuit Librarymentioning

confidence: 99%

See 1 more Smart Citation

Fuzzy neural-based approaches for efficient RF/microwave transistor modeling

Gaoua

Cheng

et al. 2009

Int J RF and Microwave Comp Aid Eng

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“…Most of pad deembedding methods without dummy pads depend upon the junction capacitance behavior in the SPICE model to extract pad parasitic capacitance by graphically determining the y-axis intersection of varying capacitance vs. a swept bias. However, this extraction technique can result in unreliable and uncertain values in the case of a high speed HBT especially designed with a small collector thickness to improve its speed [7]. Because of nonideal measurements and the thin epitaxial layers, it is very difficult to determine a straight line as described in other papers [3,8].…”

Section: Introductionmentioning

confidence: 99%

A robust parameter extraction method for HBT small‐signal equivalent circuit

Choi

Weide

2007

Micro & Optical Tech Letters

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“…In recent years, much effort has been devoted to analytical approaches of HBT equivalent-circuit parameter extraction [1][2][3][4][5][6]. Many closed-form representations of intrinsic circuit elements have been derived for direct extraction of equivalent-circuit elements [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%