A Passive Diode Detector with Harmonic Suppression

Gupta, Shubham Umeshkumar; Mandal, Mrinal Kanti; Pal, Rijubrata

doi:10.1109/imarc.2018.8877148

Cited by 2 publications

(3 citation statements)

References 8 publications

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“…However, for high level of input power proposed detector sensitivity is better. Furthermore, a signi cant reduction in the size is also achieved as compared to the detector circuit reported in [9].…”

Section: Fabrication and Measurementsmentioning

confidence: 97%

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A Compact Zero Bias Diode Detector with Harmonic Rejection for Radar System Application

Kumari

Maurya²,

Madhusudhan

2023

Preprint

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In this paper it is aimed to design and develop a passive detector by employing a Schottky Barrier Diode (SBD) with zero bias. For this work a low cost commercially available Schottky barrier diode SMS7630-079LF is adopted. A compact multi stopband resonator has been incorporated to improve the sensitivity of the detector by attenuating the RF signal up to fourth harmonic at the detector output port. The entire module is based on microstrip circuit and consequently very easy and cheap to fabricate, which fulfils the low-cost necessities of radar system assembling. To validate this method, a prototype of the proposed detector is developed for 2.26 GHz, with a board size of 0.44λg x 0.36λg. The measured outcomes confirm the suppression of the fundamental signal frequency by nearly 23.8 dB along with other high order harmonic suppression.

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Section: Fabrication and Measurementsmentioning

confidence: 97%

“…5. This gure incorporates the output voltage graph for the proposed detector along with the one proposed in [9].…”

Section: Fabrication and Measurementsmentioning

confidence: 99%

A Compact Zero Bias Diode Detector with Harmonic Rejection for Radar System Application

Kumari

Maurya²,

Madhusudhan

2023

Preprint

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“…Therefore, a high-power and high-output-current microwave SBD is required. Highly sensitive silicon-or GaAs-based SBD detectors have been demonstrated for microwave power detection at high frequency; however, they are limited at a microwave detectable power level, due to the low breakdown field strength of Si and GaAs [9][10][11][12]. On the other hand, GaN SBDs are promising candidates for improving microwave detection power.…”

Section: Introductionmentioning

confidence: 99%

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

Sun

Kang

Deng

et al. 2021

Semicond. Sci. Technol.

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We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm−2 at 3 V, a low specific on-resistance (R ON,sp) of 0.22 mΩ cm2 and breakdown voltage of 106 V. An extremely high output current of 400 mA was obtained when the detected power reached 38.4 dBm@3 GHz in pulsed-wave mode with a small anode diameter of 70 μm. Meanwhile, broadband detection at frequencies ranging from 1 to 6 GHz was achieved at 33 dBm in continuous-wave mode.

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A Passive Diode Detector with Harmonic Suppression

Cited by 2 publications

References 8 publications

A Compact Zero Bias Diode Detector with Harmonic Rejection for Radar System Application

A Compact Zero Bias Diode Detector with Harmonic Rejection for Radar System Application

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

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