A parabolic quantum dot with N electrons and an impurity

Gülveren, Berna; Atav, Ülfet; Şahin, Mehmet; Tomak, Mehmet

doi:10.1016/j.physe.2005.08.007

Cited by 59 publications

(27 citation statements)

References 37 publications

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“…(1)) sensibly represents a 2-d quantum dot with a single carrier electron [47,48]. The form of the confinement potential conforms to kind of lateral electrostatic confinement (parabolic) of the electrons in the x-y plane [2,13,20,27,49].…”

Section: Methodsmentioning

confidence: 99%

“…Under the confinement, the dopant location can tailor the electronic and optical properties of the system. This resulted to a wealth of important investigations on impurity states [2][3][4][5][6][7][8][9][10][11][13][14][15] in general, and also on their optoelectronic properties, in particular, for a wide variety of semiconductor devices [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31]. The research trend sheds light on new device physics mingled with profound technological impact.…”

Section: Introductionmentioning

confidence: 99%

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Influence of noise shape on excitation kinetics of impurity doped quantum dots

Pal¹,

Sinha

Ganguly³

et al. 2014

Manufacturing Review

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-Noise influences the functioning of nanomaterials and optoelectronic materials to a significant extent. We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by the application of external white noise with special reference to noise shape. We have exploited white noise of Gaussian and Lorentzian shapes. The said shapes in effect alter the range of spatial correlation of the white noise. We have considered both additive and multiplicative noise (in Stratonovich sense). In conjunction with the shape, the noise strength and the dopant location also fabricate the kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be prominently different. Interestingly as well as surprisingly enough, in case of additive noise, the noise strength does not affect the kinetics. The investigation reveals that the Lorentzian shape invites more diversities in the excitation kinetics when noise strength and dopant location are varied over a range than the Gaussian one. The Lorentzian shape causes a surge in the excitation rate over the other shape. The present investigation provides some useful perceptions of the functioning of mesoscopic devices where noise plays some profound role. Implications and influences: The present work assumes to have significance in engineering and technological applications of quantum dot nanodevices. Since in most of the devices noise plays some important role, the present study could also sincerely motivate further research on optical properties of those devices in presence of noise.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of noise shape on excitation kinetics of impurity doped quantum dots

Pal¹,

Sinha

Ganguly³

et al. 2014

Manufacturing Review

View full text Add to dashboard Cite

show abstract

“…(1)) sensibly represents a 2-d quantum dot with a single carrier electron [31,32]. The form of the confinement potential conforms to kind of lateral electrostatic confinement (parabolic) of the electrons in the -plane [9,10,16,33,34]. In real QDs the electrons are confined in 3 dimensions; that is, the carriers do dynamically possess a quasi-zero-dimensional domain.…”

Section: Methodsmentioning

confidence: 99%

“…Out of various kinds of investigations on impurity doping, control of optoelectronic properties emerges as the central theme [3][4][5][6][7][8][9][10][11][12][13][14][15]. Naturally, we find a vast literature comprising of good theoretical studies on impurity states [16][17][18][19][20][21]. Added to this, there are also some excellent experimental works which include the mechanism and control of dopant incorporation [22,23].…”

Section: Introductionmentioning

confidence: 99%

Influence of Oscillatory Impurity Potential and Concurrent Gasping of Impurity Spread on Excitation Profile of Doped Quantum Dots

Pal¹,

Ghosh

2013

Journal of Materials

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Excitation in quantum dots is an important phenomenon. Realizing the importance we investigate the excitation behavior of a repulsive impurity-doped quantum dot induced by simultaneous oscillations of impurity potential and spatial stretch of impurity domain. The impurity potential has been assumed to have a Gaussian nature. The ratio of two oscillations ( ) has been exploited to understand the nature of excitation rate. Indeed it has been found that the said ratio could fabricate the excitation in a remarkable way. The present study also indicates attainment of stabilization in the excitation rate as soon as surpasses a threshold value regardless of the dopant location. However, within the stabilization zone we also observe maximization in the excitation rate at some typical location of dopant incorporation. The critical analysis of pertinent impurity parameters provides important perception about the physics behind the excitation process.

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“…The change originates from the interplay between the intrinsic dot confinement potential and the introduced dopant potential. Such a change in the dot properties has led to a number of prominent investigations on doped QD [1][2][3][4][5][6][7][8][9]. In the context of optoelectronic applications, impurity-induced modulation of linear and nonlinear optical properties is highly important in photodetectors and in several high-speed electro-optical devices [10].…”

Section: Introductionmentioning

confidence: 99%

Polarizabilities of Impurity Doped Quantum Dots Under Pulsed Field: Role of Multiplicative White Noise

Saha¹,

Ghosh

2015

Braz J Phys

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We perform a rigorous analysis of the profiles of a few diagonal and off-diagonal components of linear (α xx , α yy , α xy , and α yx ), first nonlinear (β xxx , β yyy , β xyy , and β yxx ), and second nonlinear (γ xxxx , γ yyyy , γ xxyy , and γ yyxx ) polarizabilities of quantum dots exposed to an external pulsed field. Simultaneous presence of multiplicative white noise has also been taken into account. The quantum dot contains a dopant represented by a Gaussian potential. The number of pulse and the dopant location have been found to fabricate the said profiles through their interplay. Moreover, a variation in the noise strength also contributes evidently in designing the profiles of above polarizability components. In general, the off-diagonal components have been found to be somewhat more responsive to a variation of noise strength. However, we have found some exception to the above fact for the offdiagonal β yxx component. The study projects some pathways of achieving stable, enhanced, and often maximized output of linear and nonlinear polarizabilities of doped quantum dots driven by multiplicative noise.

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A parabolic quantum dot with N electrons and an impurity

Cited by 59 publications

References 37 publications

Influence of noise shape on excitation kinetics of impurity doped quantum dots

Influence of noise shape on excitation kinetics of impurity doped quantum dots

Influence of Oscillatory Impurity Potential and Concurrent Gasping of Impurity Spread on Excitation Profile of Doped Quantum Dots

Polarizabilities of Impurity Doped Quantum Dots Under Pulsed Field: Role of Multiplicative White Noise

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