“…These results,s imilar to those of SeG samples,c an be attributed to the different defect densities in SSG samples affected by the annealing temperature.T of urther understand the higher catalytic activity of Se-G-900 compared to that of Pt reference,corresponding reaction kinetics of the I 3 À reduction were studied. Therelatively low R ct values of SeG-900 are beneficial for charge collection from the external circuit and minimizing the charge loss at the electrode/electrolyte interface.I np rinciple, R ct is inversely proportional to J 0 obtained from the Tafel plots according to J 0 = RT/(nFR ct ), [16] where R is the gas constant, and T is the temperature.C onsequently, J 0 for the SeG-900 CE was calculated to be larger than that for Pt, which agreed well with the results from the Tafel polarization study described above.Furthermore,itis clearly shown that, after 10 times of sequential scanning of EIS ( Supporting Information, Figure S9), the R ct of SeG-900 does not change noticeably (Supporting Information, Table S4), implying its robust electrochemical stability. Fort he SeG-900 CE, the D of I 3 À was 2.35 10 À4 cm À2 s À1 based on the CV curve measured at 5mVs À1 ,w hich is larger than that of the Pt reference (D = 1.15 10 À4 cm À2 s À1 ), reflecting the better catalytic activity of SeG-900.…”