A one-cent room-temperature magnetoelectric sensor

Israel, Casey; Mathur, N. D.; Scott, J. F.

doi:10.1038/nmat2106

Cited by 171 publications

(110 citation statements)

References 5 publications

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“…1a) comprising polycrystalline magnetostrictive electrodes of Ni, and polycrystalline piezoelectric layers of doped BaTiO 3 (BTO). Similar MLCs show direct 30 and converse 31 strain-mediated ME coupling between these layers when measuring and applying voltages between the terminals, respectively. For energy-dispersive X-ray analysis (EDX) and magnetic force microscopy (MFM), MLCs were mechanically polished near the z direction to expose alternate Ni and BTO layers at the surface of an electrically inactive wedge ( Supplementary Fig.…”

Section: Resultsmentioning

confidence: 96%

Non-volatile electrically-driven repeatable magnetization reversal with no applied magnetic field

et al. 2013

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Repeatable magnetization reversal under purely electrical control remains the outstanding goal in magnetoelectrics. Here we use magnetic force microscopy to study a commercially manufactured multilayer capacitor that displays strain-mediated coupling between magnetostrictive Ni electrodes and piezoelectric BaTiO 3 -based dielectric layers. In an electrode exposed by polishing approximately normal to the layers, we find a perpendicularly magnetized feature that exhibits non-volatile electrically driven repeatable magnetization reversal with no applied magnetic field. Using micromagnetic modelling, we interpret this nominally full magnetization reversal in terms of a dynamic precession that is triggered by strain from voltage-driven ferroelectric switching that is fast and reversible. The anisotropy field responsible for the perpendicular magnetization is reversed by the electrically driven magnetic switching, which is, therefore, repeatable. Our demonstration of non-volatile magnetic switching via volatile ferroelectric switching may inspire the design of fatigue-free devices for electric-write magnetic-read data storage.

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Section: Resultsmentioning

confidence: 96%

Non-volatile electrically-driven repeatable magnetization reversal with no applied magnetic field

et al. 2013

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“…Particularly attractive are artificially assembled ferromagnetic/ferroelectric hybrid systems, since they enable an elastic strain-mediated electric-field control of magnetism via inverse magnetostriction. [4][5][6][7][8][9] In such hybrids, the control of the key magnetic properties, such as coercive field, saturation magnetization, or remanent magnetization via electric voltages has been demonstrated recently. [10][11][12][13][14][15][16] A further major development is the demonstration of a reversible, all-electricfield control of magnetization orientation or reversal, and thus of an electrically controlled magnetization switching.…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile, reversible electric-field controlled switching of remanent magnetization in multifunctional ferromagnetic/ferroelectric hybrids

Brandlmaier¹,

Geprägs²,

Woltersdorf³

et al. 2011

Journal of Applied Physics

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In spin-mechanics, the magnetoelastic coupling in ferromagnetic/ferroelectric hybrid devices is exploited in order to realize an electric-voltage control of magnetization orientation. To this end, different voltage-induced elastic strain states are used to generate different magnetization orientations. In our approach, we take advantage of the hysteretic expansion and contraction of a commercial piezoelectric actuator as a function of electrical voltage to deterministically select one of two electro-remanent elastic strain states. We investigate the resulting magnetic response in a nickel thin film/piezoelectric actuator hybrid device at room temperature, using simultaneous magnetooptical Kerr effect and magnetotransport measurements. The magnetic properties of the hybrid can be consistently described in a macrospin model, i.e., in terms of a single magnetic domain. At zero external magnetic field, the magnetization orientation in the two electro-remanent strain states differs by 15 , which corresponds to a magnetoresistance change of 0.5%. These results demonstrate that the spin-mechanics scheme indeed enables a nonvolatile electrically read-and writable memory bit where the information is encoded in a magnetic property.

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“…[20][21][22][23][24][25][26] One important series of such multiferroic devices is the electrostatically tunable microwave multiferroic signal processing devices, including tunable resonators, 24 phase shifters, 25 and tunable filters. 27 Compared to conventional tunable microwave magnetic devices that are tuned by magnetic field, these electrostatically tunable microwave multiferroic devices are much more energy efficient, less noisy, compact, and light-weight.…”

Section: Multiferroic Thin Film Devicesmentioning

confidence: 99%

“…27 Compared to conventional tunable microwave magnetic devices that are tuned by magnetic field, these electrostatically tunable microwave multiferroic devices are much more energy efficient, less noisy, compact, and light-weight. The magneto electric effect can be realized in multiferroic composites through a strain/stress mediated interaction [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] which enables effective energy transfer between electric and magnetic fields and leads to important new functionalities and new devices. A key component for reconfigurable RF/microwave electronics is a voltage tunable inductor.…”

Section: Multiferroic Thin Film Devicesmentioning

confidence: 99%

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Subramanyam¹,

Cole²,

Sun³

et al. 2013

Journal of Applied Physics

143

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There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges. V C 2013 AIP Publishing LLC.

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A one-cent room-temperature magnetoelectric sensor

Cited by 171 publications

References 5 publications

Non-volatile electrically-driven repeatable magnetization reversal with no applied magnetic field

Non-volatile electrically-driven repeatable magnetization reversal with no applied magnetic field

Nonvolatile, reversible electric-field controlled switching of remanent magnetization in multifunctional ferromagnetic/ferroelectric hybrids

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

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