A numerical study on thermal deformation of through silicon via with electroplating defect
Chongbin Hou,
Yang Qiu,
Xingyan Zhao
et al.
Abstract:PurposeBy investigating the thermal-mechanical interaction between the through silicon via (TSV) and the Cu pad, this study aimed to determine the effect of electroplating defects on the upper surface protrusion and internal stress distribution of the TSV at various temperatures and to provide guidelines for the positioning of TSVs and the optimization of the electroplating process.Design/methodology/approachA simplified model that consisted of a TSV (100 µm in diameter and 300 µm in height), a covering Cu pad… Show more
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