A numerical simulation study for the combined effect of static and rotating magnetic fields in liquid phase diffusion growth of SiGe

Dost

2013

Acta Phys. Pol. A

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The silicon transport in a silicongermanium melt has been studied to address the issues of melt replenishment and seed production for the Czochralski growth of silicon germanium (SiGe) crystals. The growth of SiGe single crystals by the Czochralski method requires that the melt be replenished with silicon during the growth process due to the rejection of germanium into the melt during solidication. To facilitate the replenishment of the melt, an accurate knowledge of the dissolution rate of silicon into the melt and its transport through the melt is required. To address these issues, a number of experiments have been carried out on the dissolution of silicon into a germanium melt. Liquid phase diusion growth experiments were also conducted for insight into transport and as a possible method for seed crystal production. The experiments encompassed various temperatures, crucible geometries, crucible translation, and magnetic eld levels to determine optimum conditions for the most favorable dissolution rates and mass transport in the melt. Results have shown that replenishment from bottom of the crucible is most eective due to the enhanced silicon transport by buoyancy. The application of magnetic elds may also provide an eective mean to control the replenishment rate (mass transport rate) in the melt.

Section: Resultsmentioning

confidence: 80%

Section: Methodsmentioning

confidence: 99%

Section: Silicon Transport Under Rotating and Combined Magnetic Elds mentioning

confidence: 99%

Section: Silicon Transport Under Rotating and Combined Magnetic Elds mentioning

confidence: 99%

Section: Experimental Setup and Proceduresmentioning

confidence: 99%

See 3 more Smart Citations

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Dost

2013

Acta Phys. Pol. A

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Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

Dost

2010

Cryst. Res. Technol.

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Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples.

Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

Dost²

2010

Cryst. Res. Technol.

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The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field.