A Novel Vertical Field Plate Lateral Device With Ultralow Specific On-Resistance

Breakdown Voltage Model and Electrical Characteristics of CMOS Compatible RESURF STI Drain Extended MOS Transistors

“…5 shows the BV versus the overlap or underlap (O p ) between the local PW plate and STI. As shown in (11), the O p , which is proportional to P r , can influence the RESURF effect. When the underlap O p is large, such as O p ≤ −0.5 μm, the RESURF effect due to the local PW plate is weak and the reduction in the NW doping concentration is low.…”

“…Using (11) and (12), the effective doping concentration of the accumulation region and the drift region can be deduced. As for the transition region, a Gaussian function is used to model the doping profile for the transition region…”

“…The STI has been used in DEMOS transistor to enhance the breakdown voltage (BV) by increasing the length of the drain extension region without sacrificing the device area [8]. Besides, the field plate can be used to enhance the device BV by controlling the curvature of depletion layer [9]- [11]. The introduction of this vertical STI structure and poly plate change the electric field distribution significantly and a 2-D model is required to analyze its breakdown behavior.…”

A low specific on-resistance power trench MOSFET with a buried-interface-drain

“…A SOI lateral IGBT with a reduced cell pitch was studied in 2013 [13]. In 2014, trench SOI power MOSFETs with a single or double vertical field plate was research [14,15]. Moreover, a RESURF-enhanced p-channel trench SOI LDMOS was proposed [16].…”

Field-plate assisted RESURF power devices : gradient based optimalization, degradation and analysis

“…The extraction methodology is applicable to the, 1-D like, field expansion (Fig. 4.1c,d) found in the gradient based FP assisted RESURF devices [2], using either trench or lateral [33,66,[87][88][89]) drain extension configurations. A important requirement is that the extension is longer than 5 times the characteristic length λ (Fig.…”