A Novel UWB (0.045–50 GHz) Digital/Analog Compatible MMIC Variable Attenuator With Low Insertion Phase Shift and Large Dynamic Range

Dai, Yong; Fang, Da‐Gang; Guo, Yong‐Xin

doi:10.1109/lmwc.2006.887263

Cited by 25 publications

(6 citation statements)

References 11 publications

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“…M1, M2 and M3 act as switches which are controlled by output control signals of the logical circuit through 5KΩ resistors of the gate poles. High resistance can provide enough radio frequency isolation between the gate of each switched MOSFET and the control sources [9]. V1 is the control voltage for the series switch MOSFET(M1) and V2 is the control voltage for the shunt switched MOSFETs (M2, M3).…”

Section: Attenuatormentioning

confidence: 99%

“…Especially, digital attenuators are often applied for gain control of transceivers and temperature compensation amplifiers [5,6]. Prior researches about digital attenuators were mainly focused on low insertion loss, large dynamic range and low insertion phase variation [7][8][9][10][11]. However, a conventional digital attenuator MMIC is usually used as an individual module of which the control voltage is provided off chip.…”

Section: Introductionmentioning

confidence: 99%

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A novel automatic attenuator with ultra-fast response time

Liu

Zhang

Peng

et al. 2018

IEICE Electron. Express

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This paper presents a novel automatic attenuator with ultra-fast transient response time. The proposed automatic attenuator combines control generation and a digital attenuator together. The control generation chain consists of a RF envelope detector, voltage comparators and a logic circuit. The state of the digital attenuator is determined by the output control signals of the control generation chain. The chip is fabricated using HuaHong 0.18um standard CMOS technology. Measured results are offered showing that the transient response time of the whole system is less than 10 ns in the ultra-wide operation frequency range of 1GHz~10GHz.

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Section: Attenuatormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A novel automatic attenuator with ultra-fast response time

Liu

Zhang

Peng

et al. 2018

IEICE Electron. Express

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“…Passive step attenuators have advantages on bandwidth and linearity, and they are well used as gain controlled units after low noise amplifiers (LNAs) and power amplifiers (PAs) in communication systems [1,2]. The conventional attenuators are implemented with GaAs technology and perform excellently [2,3], but their applications are limited for inadaptability of monolithic integration with silicon-based process.…”

Section: Introductionmentioning

confidence: 99%

“…The conventional attenuators are implemented with GaAs technology and perform excellently [2,3], but their applications are limited for inadaptability of monolithic integration with silicon-based process. The advanced CMOS process provides the possibility to achieve passive attenuators.…”

Section: Introductionmentioning

confidence: 99%

“…The advanced CMOS process provides the possibility to achieve passive attenuators. The step attenuators implemented with resistive networks and switches are of high insertion loss and large insertion phase [3,4,5,6], while the distributed attenuators often perform better in lower insertion loss and lower phase distortion [2,7]. As the on-chip transmission lines consume large chip area when used to implement an attenuator with a large attenuation range, the applications of distributed attenuators are limited.…”

Section: Introductionmentioning

confidence: 99%

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A CMOS semi-distributed step attenuator with low insertion loss and low phase distortion

Zhang¹,

Zhang²,

Li³

et al. 2014

IEICE Electron. Express

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A semi-distributed step attenuator with low insertion loss and low phase distortion is presented with 0.18 µm BiCMOS process, which is implemented with a step distributed attenuator for 0-7 dB attenuation with low insertion loss and two :-type switched resistive attenuation modules for large attenuation amplitude. The proposed attenuator has a maximum attenuation range of 0-31 dB with 1 dBincrease at the frequency range of 10-20 GHz and involves less than 8.6 dB of insertion loss. The RMS amplitude error and insertion phase at each attenuation state are less than 0.6 dB and 3°, respectively.

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A Micromachined Reconfigurable Attenuator

Liu¹,

Guo²

2017

Toxinology

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As the essential power control and adjustment component, microwave power attenuator has been widely applied in spectrum analyzer, network analyzer, receivers, and other microwave instrument systems. There has been significant interest in developing miniaturized microwave devices with small geometric dimension for commercial microwave test systems. Traditional attenuator with large size is difficult to integrate with IC due to its cumbersome mechanical relay or switches. Radio frequency microelectromechanical system (RF MEMS) switches present many advantages such as less insertion loss, higher isolation, better linearity, and lower power consumption and more importantly, its small size. It has absorbed great attention for the purpose of miniaturization of attenuator. Recent research shows step attenuator based on RF MEMS switches meet well the state-of-the-art requirements of miniaturized reconfigurable attenuation devices with high precision and broadband performance. In this chapter, we introduce a compact 3-bit step attenuator based on RF MEMS switches with 0~70 dB attenuation at 10 dB intervals up to 20GHz. The on-chip attenuator consists of 12 ohmic MEMS switches, 3 π-type resistive attenuation networks, and microwave compensate structures. To optimize the attenuation characteristics within the broadband, theoretical analysis and 3D modelling were performed. The device was obtained using MEMS process combined with polysilicon integrated circuit (IC) process. In section "Structure Design," the structure of the step attenuator was proposed and three modules were designed independently including: (1) Resistive attenuation network. Two approaches are presented and discussed. (a) Polysilicon thin film resistor with symmetric topology is applied to realize the high-precision π-type resistive attenuation modules (10, 20, 40 dB). (b) Distributed TaN single

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A Novel UWB (0.045–50 GHz) Digital/Analog Compatible MMIC Variable Attenuator With Low Insertion Phase Shift and Large Dynamic Range

Cited by 25 publications

References 11 publications

A novel automatic attenuator with ultra-fast response time

A novel automatic attenuator with ultra-fast response time

A CMOS semi-distributed step attenuator with low insertion loss and low phase distortion

A Micromachined Reconfigurable Attenuator

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