A Novel Unified Model for Copper and MLGNR Interconnects Using Voltage- and Current-Mode Signaling Schemes

Agrawal, Yash; Kumar, Mekala Girish; Chandel, Rajeevan

doi:10.1109/temc.2016.2587821

Cited by 39 publications

(31 citation statements)

References 33 publications

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“…Finite-difference time-domain (FDTD), a numerical-based method is efficient in modelling the electromagnetic phenomenon [12][13][14]. To ensure stability, half-cell apart distribution of voltage and current variables over space and time is adopted in FDTD technique.…”

Section: Introductionmentioning

confidence: 99%

Modelling and performance analysis of dielectric inserted side contact multilayer graphene nanoribbon interconnects

Kumar

Agrawal

Chandel

2017

IET Circuits, Devices & Systems

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In this work, performance of dielectric inserted side contact multilayer graphene nanoribbon (Di-side-GNR) coupled interconnects using unconditionally stable finite-difference time-domain (USFDTD) technique has been investigated. The model developed for the same, overcomes the limitation of Courant stability criterion prevalent in the conventional finite-difference time-domain (FDTD) technique. The proposed model accurately analyses the crosstalk effect in copper (Cu), side contact multilayer graphene nanoribbon and Di-side-GNR interconnects. It is found that the crosstalk effect is least in Di-side-GNR amongst the three types of interconnect considered in this study. The proposed model and HSPICE simulation results match closely. Further, for transient analysis USFDTD technique based proposed model takes nearly 1.5 times lesser CPU runtime compared to the conventional FDTD technique.

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Section: Introductionmentioning

confidence: 99%

Modelling and performance analysis of dielectric inserted side contact multilayer graphene nanoribbon interconnects

Kumar

Agrawal

Chandel

2017

IET Circuits, Devices & Systems

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“…Here, R cm represents the monolayer nonideal contact resistance and its value is in the range from 1 K to 20 K [33]. R qm denotes the monolayer quantum resistance and can be written as R qm = h/2e 2 (herein h is Plank's constant and e is electron charge).…”

Section: Electrical Modeling Of Mlgnr Interconnects a Two-line Cmentioning

confidence: 99%

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

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“…Here, R cm denotes the imperfect contact resistance and its value ranges from 1 KΩ to 20 KΩ [13]. R qm is the monolayer quantum resistance and can be defined as R qm = h/2e 2 (herein h is Plank's constant and e is charge of electron).…”

Section: Interconnect Modelmentioning

confidence: 99%

“…To date, a series of studies about these issues on MLGNR interconnects have been done. In reference [13], Agrawal et al presented the analytical model of crosstalk delay and crosstalk noise based on the FDTD method. In references [14][15][16], the propagation delay and transfer gain for a single-line of MLGNR interconnect were investigated.…”

Section: Introductionmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

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A Novel Unified Model for Copper and MLGNR Interconnects Using Voltage- and Current-Mode Signaling Schemes

Cited by 39 publications

References 33 publications

Modelling and performance analysis of dielectric inserted side contact multilayer graphene nanoribbon interconnects

Modelling and performance analysis of dielectric inserted side contact multilayer graphene nanoribbon interconnects

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

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