Topological semimetals have attracted much attention
because of
their excellent properties, such as ultra-high speed, low energy consumption
quantum transport, and negative reluctance. Searching materials with
topological semimetallic properties has become a new research field
for Group-IV materials. Herein, using first-principles calculations
and tight-binding modeling, we proposed a topological nodal-line semimetal
ABW-Ge4 when spin–orbit coupling (SOC) is ignored,
which is composed of pure germanium atoms in a zeolite framework ABW.
It holds excellent dynamic and thermal stability. In its electronic
band structure, there exists a stable Dirac linear band crossing near
the Fermi energy level, which forms a closed ring in the k
x
= 0 plane of the Brillouin zone (BZ).
Our symmetry analysis reveals that the nodal ring is protected by M
x
mirror symmetry. Furthermore,
by examining the slope index in all possible
k
paths through the considered Dirac point, we find that
the band dispersion near the Dirac point is greatly anisotropic. In
some direction, the Fermi velocity is even larger than that of graphene,
being promising for the future ultra-high speed device. When spin–orbit
coupling is included, the nodal line is gapped and the system becomes
a topological insulator with topological invariants Z
2 = 1. Our findings not only identify a new Ge allotrope
but also establish a promising topological material in Group-IV materials,
which may have the desirable compatibility with the traditional semiconductor
industry.