A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage

Bai, Pengxiang; Zhou, Qi; Huang, Peng; Chen, Kuangli; Zhu, Liyang; Wang, Shouyi; Gao, Wei; Zhou, Chunhua; Zhang, Chao

doi:10.1109/ted.2022.3146110

IEEE Trans. Electron Devices

2022

DOI: 10.1109/ted.2022.3146110

|View full text |Cite

A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage

Pengxiang Bai

Qi Zhou

Peng Huang

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

2024

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However due to high electric field the electrons may be trapped in free surface state causing current collapse. 9,10 In further development of HEMT device, a field plate above gate smoothens the electric field distribution and reduces peak electric field that suppresses the current collapse. 11,12 Extending of the field plate gate towards drain can further uniformly distribute the electric field in the channel which leads to further improvement in Breakdown voltage (V B ), but scales-down the device Transconductance (Gm).…”

mentioning

confidence: 99%

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

V²,

Chander³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this research work, design of the extended field plate length (E-FPL) t-gate with Fe-doped AlGaN buffer structure on the graded aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) high electron mobility transistor (HEMT) is proposed. The gate length of 60 nm with an ExFPL up to 50 nm towards the drain shows remarkable improvement in breakdown voltage. Meanwhile, the drain current and transconductance is further improved by the Fe-doped AlGaN Buffer design. In radio frequency (RF) small signal analysis this device exhibits a peak current-gain cutoff frequency fT of 148 GHz. This device has improved transconductance of 24% with high frequency. It is highly compatible with military applications such as RF upstream transmitters, ship and aircraft communication transmitters and high-frequency radars (HFRs).

show abstract

mentioning

confidence: 99%

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

V²,

Chander³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs

Guo,

Ren,

Peng

et al. 2024

Micro and Nanostructures

View full text Add to dashboard Cite

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

Xu²,

Guo

et al. 2022

Micromachines

View full text Add to dashboard Cite

In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS. According to the simulation and analyzed characteristics, the best performance renders a remarkable Baliga’s figure of merit (FOM) of 4.767 GW·cm2 owing to the modulation of the electric-field distribution. By adjusting the size of the stepped doping microstructure and doping concentration in the GaN drift, the maximum optimized result can achieve a relatively high breakdown voltage (BV) of 2523 V with a very low specific on-resistance (Ron,sp) of 1.34 mΩ·cm2, or the BV can be improved to 3024 V with a specific on-resistance (Ron,sp) of 2.08 mΩ·cm2. Compared with the conventional superjunction GaN-based trench CAVET, the newly demonstrated structure can achieve a 43% reduction in Ron,sp and increase by almost 20% the original BV. These results indicate the superiority of using the stepped doping microstructure in a trench CAVET to improve the BV and decrease Ron,sp, providing a reference for further development of GaN-based CAVETs.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage

Cited by 3 publications

References 34 publications

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

Contact Info

Product

Resources

About