A novel tool for mapping composition distributions in semiconductor microstructures—application to InxGa1−xP quantum wires

Abstract

Articles you may be interested inEffect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wires Design of composite InAsP/InGaAs quantum wells for a 1.55 μm polarization independent semiconductor optical amplifier Appl.A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow (ϳ150 Å) In x Ga 1Ϫx P multiquantum wire array grown via a strain-induced laterally ordered process.

Spectroscopic study of self-organized quantum dot like structures in Ga–In–P superlattices on (311) GaAs

“…This value of x ͑which might change somewhat when the appropriate strain tensor, as required in the present case, is taken into account͒ is close to the expected Ӎ 0.4/0.6 Ga composition contrast between the Ga deficient and Ga rich regions in the SILCM modified phase. 8,30 The sharp vertical lines in Fig. 6͑c͒ show the absorption spectrum for a 210 Å dot using the above model.…”

Resonance Raman scattering studies of composition-modulated GaP/InP short-period superlattices

“…However, in this earlier work, 15 the polarizations of the excitation laser or the scattered photons were not specified, and the effect of the coherency strain was neglected in the analysis. As will be shown later, it turns out that the resonance behavior of the phonons is strongly dependent on the polarizations of the probing photons, and therefore, important details are obscured in unpolarized studies.…”