A Novel Three-State RF MEMS Switch for Ultrabroadband (DC-40 GHz) Applications

Zhu, Yan-Qing; Han, Lei; Wang, Lifeng; Tang, Jieying; Huang, Qing‐An

doi:10.1109/led.2013.2269993

Cited by 36 publications

(18 citation statements)

References 7 publications

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“…The proposed switch's novel design gives it the power to route the signal from the signal line to the ground when the beam is in upstate through a bridge (increasing isolation manifolds) and this design alteration makes it superior in performance from earlier series switches. The switch's performance is better than those previously proposed [10][11][12][13][14] and it operates on a wide frequency band.…”

Section: Introductionmentioning

confidence: 77%

“…The novelty of the proposed switch is the addition of an overhead bridge surpassing the t-line, which exceptionally enhances the RF performance. The bridge proposed is integrated in the design of Radant Switch [10], which showed exceptional reliability. The switch provides excellent isolation of -99.5 dB (peak value) and insertion as low as -0.3 dB up to 100 GHz.…”

Section: Discussionmentioning

confidence: 99%

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An Ultra Wideband, Novel and Reliable RF MEMS Switch

Jha¹,

Gogna²,

Gaba³

et al. 2016

Transactions on Electrical and Electronic Materials

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This paper presents the design and characterization of wide band ohmic microswitch with an actuation voltage as low as 20~25 V, and a restoring force of 14.1 μN. The design of the proposed switch is primarily composed of an electrostatic actuator, bridge membrane, cantilever (beam) and coplanar waveguide, suspended over the substrate. The analysis shows an insertion loss of -0.002 dB at 1GHz and remains as low as -0.35 dB, even at 100 GHz. The isolation loss of the switch is sustained at -21.09 dB at 100GHz, with a peak value of -99.58 dB at 1 GHz and up-state capacitance of 4 fF. To our knowledge, this is the first demonstration of a series contact switch, which works over a wide bandwidth (DC-100 GHz) and with such a high and sustained isolation, even at high frequencies and with an excellent figure of merit (f c =1/2.pi.Ron.Cu= 39.7 THz).

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Section: Introductionmentioning

confidence: 77%

Section: Discussionmentioning

confidence: 99%

An Ultra Wideband, Novel and Reliable RF MEMS Switch

Jha¹,

Gogna²,

Gaba³

et al. 2016

Transactions on Electrical and Electronic Materials

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show abstract

“…In order to evaluate RF performance of the proposed switch, we have performed small-signal modeling [10][11]. Fig.…”

Section: B Modelingmentioning

confidence: 99%

Development of a novel bidirectional electrothermal actuator and its application to RF MEMS switch

Zhu

Han

Qin

et al. 2014

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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This paper presents the design and testing results of an electrothermally driven MEMS (microelectromechanical systems) actuator. Different from conventional uni-directional thermal actuators, this in-plane bi-directional electrothermal actuator is capable of producing displacements in two directions as a single device. The RF MEMS switch driven by this cascaded electrothermal actuator is also proposed. Due to this bidirectional actuator, the proposed switch can not only realize the OFF-state to ON-state shifting but also provide an additional deep OFF-state. At the deep OFF state, the isolation better than -30 dB can be achieved at the whole frequency range of 0 ~ 40 GHz.

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“…Many push-pull (see-saw) configuration switches have recently been fabricated, following designs by Hah et al [9,10], Chiao et al [11], and Milanovic et al [12,13], etc. While an existing switch has been designed to operate on a wide RF spectrum, it is limited to 40 GHz [16]. RF MEMS have gained such considerable significance that they are now being integrated with antennas to enhance operation.…”

Section: Introductionmentioning

confidence: 99%

“…The switch has a stiff beam eliminating any stray mechanical forces. The switch has an excellent isolation of -90.9 dB (compared to -58 dB in conventional designs [3]), the insertion of -0.2 dB, and a wide bandwidth of 88 GHz (compared to 40 GHz in conventional design [16]) making the switch suitable for wide band applications. …”

mentioning

confidence: 99%

Design Aspects of a New Reliable Torsional Switch with Excellent RF Response

Gogna¹,

Jha²,

Gaba³

et al. 2016

Transactions on Electrical and Electronic Materials

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This paper proposes a metal contact RF MEMS switch which utilizes a see-saw mechanism to acquire a switching action. The switch was built on a quartz substrate and involves vertical deflection of the beam under an applied actuation voltage of 5.46 volts over a signal line. The see-saw mechanism relieves much of the operation voltage required to actuate the switch. The switch has a stiff beam eliminating any stray mechanical forces. The switch has an excellent isolation of -90.9 dB (compared to -58 dB in conventional designs [3]), the insertion of -0.2 dB, and a wide bandwidth of 88 GHz (compared to 40 GHz in conventional design [16]) making the switch suitable for wide band applications.

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A Novel Three-State RF MEMS Switch for Ultrabroadband (DC-40 GHz) Applications

Cited by 36 publications

References 7 publications

An Ultra Wideband, Novel and Reliable RF MEMS Switch

An Ultra Wideband, Novel and Reliable RF MEMS Switch

Development of a novel bidirectional electrothermal actuator and its application to RF MEMS switch

Design Aspects of a New Reliable Torsional Switch with Excellent RF Response

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