Abstract:NAND flash is the most widely used non-volatile memories due to its low cost and rewritable properties. However, some problems exist in NAND flash that need to be solved, such as low writing and reading speed, high operating voltage, and relatively large cell dimensions. Next generation memories, especially resistive random access memory (RRAM) could improve these problems. The technologies of 3D vertical architecture have made a major breakthrough in establishing high-density memory structures. Combined with … Show more
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