A novel temperature dependent method for borophene synthesis

Chowdhury, Mohammad Asaduzzaman; Uddin, M.M. Kamal; Shuvho, Md. Bengir Ahmed; Rana, Masud; Hossain, Nayem

doi:10.1016/j.apsadv.2022.100308

Cited by 20 publications

(13 citation statements)

References 27 publications

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“…Pt eV) which also form an ohmic contact with p-ZnPc. Platinum is preferred because of its resistance to contamination, corrosion resistance and it has high electrical resistance suiting Resonant tunneling diode devices [12,13].…”

Section: Design Considerationsmentioning

confidence: 99%

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

Qasrawi,

Daragme

2024

Phys. Scr.

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Herein Zinc phthalocyanine (ZnPc) based multifunctional devices are fabricated and characterized. The device fabrication included formation of an Au nanosheets onto n-Si wafers and coating these nanosheets with 500 nm thick ZnPc layer. Silver and platinum were used to form a Schottky and an ohmic contacts with n-Si and ZnPc, respectively. The device hybrid structure (Ag/n-Si/Au/p-ZnPc/Pt; abbreviated as ASZ) is composed of Ag/n-Si Schottky arm and p- and n- layers forming pn junction separated by Au nanosheets. Electrical and photoelectrical measurements on the ASZ devices have shown their ability to perform as conventional metal-oxide-semiconductor capacitors (CMOS). These CMOS devices showed light and frequency controlled charge accumulation, depletion and inversion mechanisms within the range of 1.0-50 MHz. The flat band and threshold voltages of the ASZ capacitors are engineered by the imposed ac signal frequency and by infrared (IR) light. In addition, ASZ devices performed as biasing controlled IR photosensors and as current rectifiers. A rectification ratio of 103, IR light sensitivity of 39, specific detectivity of .96×109 Jones and current responsivity exceeding 9.0 mA/W are recorded at biasing voltage of 4.5 V. Moreover ASZ devices displayed microwave resonator characteristics presented by negative capacitance effect, resonance –antiresonance phenomena and high microwave cutoff frequency. The latter is larger than 10 GHz nominating the device for 6G technology applications.

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Section: Design Considerationsmentioning

confidence: 99%

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

Qasrawi,

Daragme

2024

Phys. Scr.

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“…The results conclude that borophene synthesis complexes also interlink with the supported substrates. The substrates Ag (111), Au (111), and Cu (111) were considered more stable . The experiment of synthesis of borophene was performed in an ultrahigh vacuum (UHV) chamber at a low temperature of 4.5 K and base pressure of 2 × 10 –11 Torr.…”

Section: Promise Of 2d Materials To Address the Limitations Of The Co...mentioning

confidence: 99%

“…The substrates Ag (111), Au (111), and Cu (111) were considered more stable. 109 The experiment of synthesis of borophene was performed in an ultrahigh vacuum (UHV) chamber at a low temperature of 4.5 K and base pressure of 2 × 10 −11 Torr. The sample is grown in a molecular beam epitaxy (MBE) chamber with Ag (111) single crystal as the substrate where pure boron was evaporated by using an electron beam evaporator on the clean substrate of Ag (111) in an appropriate temperature.…”

Section: Electrochemical Characteristics Of Borophene-based Batterymentioning

confidence: 99%

Borophene Potential for Developing Next-Generation Battery Applications: A Comprehensive Review

Ashraf,

Abghoui

2023

Energy Fuels

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“…In this electrolytic set-up, a monoatomic layer of borophene is deposited on the electrode due to oxidation and reduction reactions at the electrode surface. 13 Mechanical exfoliation: this method involves the mechanical peeling of a bulk boron crystal, similar to graphene synthesis using adhesive tape, for the synthesis of boropohene. Researchers synthesized borophene using this peeling technique recently with heterolayers.…”

Section: Introductionmentioning

confidence: 99%